可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ | 934667630341 | WLCSP22_SOT8086 | 订单产品 |
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Click here for more informationGANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
The GANB4R8-040CBA is a 40 V, 4.8 mΩ bi-directional Gallium Nitride (GaN) High Electron-Mobility-Transistor (HEMT) in a Wafer Level Chip-Scale (WLCSP) package. It is a normally-off e-mode device offering superior performance.
Features and benefits
Enhancement mode - normally-off power switch
Bi-directional device
Ultra high switching speed capability
Ultra-low on-state resistance
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Wafer Level Chip-Scale Package (WLCSP) 2.1 mm x 2.1 mm
Applications
High-side load switch
OVP protection in smart phones USB port
DC-to-DC converters
Power switch circuits
Stand-by power system
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ (934667630341) |
Active | 4R8ACBA |
WLCSP22 (WLCSP22_SOT8086) |
WLCSP22_SOT8086 | WLCSP22_SOT8086_341 |
文档 (19)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANB4R8-040CBA | 40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP) | Data sheet | 2024-04-10 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| WLCSP22_SOT8086 | wafer level chip-size package | Package information | 2024-04-25 |
| WLCSP22_SOT8086_341 | WLCSP22; Reel dry pack for SMD, 7"; Q2/T3 product orientation | Packing information | 2024-03-28 |
| GANB4R8-040CBA_LTspice | GANB4R8-040CBA LTspice model | SPICE model | 2024-06-25 |
| GANB4R8-040CBA_SIMetrix | GANB4R8-040CBA SIMetrix model | SPICE model | 2024-06-25 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| CauerModel_GANB4R8-040CBA | Cauer model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| FosterModel_GANB4R8-040CBA | Foster model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| GANB4R8-040CBA | GANB4R8-040CBA RC thermal model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Cauer | GANB4R8-040CBA Cauer model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Foster | GANB4R8-040CBA Foster model | Thermal model | 2024-06-25 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANB4R8-040CBA_LTspice | GANB4R8-040CBA LTspice model | SPICE model | 2024-06-25 |
| GANB4R8-040CBA_SIMetrix | GANB4R8-040CBA SIMetrix model | SPICE model | 2024-06-25 |
| CauerModel_GANB4R8-040CBA | Cauer model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| FosterModel_GANB4R8-040CBA | Foster model GANB4R8-040CBA | Thermal model | 2024-06-25 |
| GANB4R8-040CBA | GANB4R8-040CBA RC thermal model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Cauer | GANB4R8-040CBA Cauer model | Thermal model | 2024-06-25 |
| GANB4R8-040CBA_Foster | GANB4R8-040CBA Foster model | Thermal model | 2024-06-25 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GANB4R8-040CBA | GANB4R8-040CBAZ | 934667630341 | Active | WLCSP22_SOT8086_341 | 2,500 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANB4R8-040CBA
40 V, 4.8 mOhm bi-directional Gallium Nitride (GaN) FET in a 2.1 mm x 2.1 mm Wafer Level Chip-Scale Package (WLCSP)
从安世半导体购买
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