Block diagrams
Highlighted components are Nexperia focus products
Products
Design considerations
- Choice of topology for DC/DC and DC/AC conversion, but isolated half-bridge boost and full bridge inverter offer the highest efficiencies
- Need to ensure a optimal gain ratio on the half-bridge boost and a 50% duty cycle
- Despite IGBTs dominating the DC/AC stage due to their very low cost, GaN FETs allow for higher efficiency and smaller line filters.
DFN0606 MOSFET：小封装里的高效器件
用更少的器件实现更多的功能，这是移动和便携式应用（尤其是可穿戴设备）的宗旨。通过使用可用的最高效开关选项，设计人员可以获得更多的空间来嵌入功能，同时最大程度地减少电池消耗。Nexperia新推出的小信号MOSFET采用超小型DFN0606封装，能够大幅节省空间，且导通电阻超低。
Quick Learning - Benefits of using power GaN FETs in Solar inverters
Join Ilian as he explains the differences between an IGBT based DC/AC converter and a GaN FET based DC/AC converter, highlighting the benefits GaN brings.