BUK7V4R2-40H
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Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
Production |
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BUK9K13-60RA
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Dual N-channel 60 V, 12.5 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology |
Production |
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BUK9K25-40RA
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Dual N-channel 40 V, 29 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology |
Production |
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BUK9K35-60RA
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Dual N-channel 60 V, 35 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology |
Production |
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BUK9K52-60RA
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Dual N-channel 60 V, 55 mOhm logic level MOSFET in LFPAK56D using Repetitive Avalanche technology |
Production |
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BUK9M20-60EL
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Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology |
Production |
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BUK9M31-60EL
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Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology |
Production |
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BUK9M67-60EL
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Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology |
Production |
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BUK9V13-40H
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Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
Production |
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BUK9Y13-60EL
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Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology |
Production |
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BUK9Y22-60EL
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Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology |
Production |
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BUK9Y7R0-60EL
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Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology |
Production |
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BUK9Y8R8-60EL
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Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology |
Production |
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PSMN012-60HL
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N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche |
Production |
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PSMN013-100YSE
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N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 |
Production |
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PSMN013-40VLD
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Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) |
Production |
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PSMN040-100MSE
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N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications |
Production |
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PSMN047-100NSE
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N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement |
Production |
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PSMN071-100NSE
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N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement |
Production |
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PSMN075-100MSE
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N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications |
Production |
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PSMN0R9-30ULD
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N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 |
Production |
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PSMN0R9-30YLD
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N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Production |
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PSMN1R0-100ASE
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N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package |
Development |
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PSMN1R0-30YLE
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N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMN1R0-40SSH
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N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
Production |
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PSMN1R0-40ULD
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N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 |
Production |
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PSMN1R0-40YLD
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N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Production |
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PSMN1R0-40YSH
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N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Production |
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PSMN1R1-100CSE
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N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package |
Development |
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PSMN1R1-30YLE
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N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMN1R2-55SLH
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N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 |
Production |
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PSMN1R4-30YLD
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N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Production |
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PSMN1R5-30BLE
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N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK |
Production |
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PSMN1R5-50YLH
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N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E |
Production |
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PSMN1R6-25YLE
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N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMN1R6-30MLH
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N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology |
Production |
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PSMN1R7-40YLD
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N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology |
Production |
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PSMN1R9-80SSE
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N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 |
Production |
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PSMN2R0-30YLE
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N-channel 30 V 2 mΩ logic level MOSFET in LFPAK |
Production |
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PSMN2R0-55YLH
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N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E |
Production |
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PSMN2R1-30YLE
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N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMN2R3-100SSE
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N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 |
Production |
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PSMN2R3-100SSJ
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N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88 |
Development |
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PSMN2R4-30YLD
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N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology |
Production |
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PSMN2R5-80SSE
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N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 |
Qualification |
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PSMN2R9-100SSE
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N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 |
Qualification |
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PSMN3R4-30BLE
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N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK |
Production |
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PSMN3R7-100BSE
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N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK |
Production |
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PSMN3R9-100YSF
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NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package |
Production |
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PSMN4R0-60YS
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N-channel LFPAK 60 V, 4.0 mΩ standard level FET |
Production |
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PSMN4R1-60YL
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N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 |
Production |
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PSMN4R2-40VSH
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Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) |
Production |
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PSMN4R2-80YSE
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N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E |
Production |
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PSMN4R8-100BSE
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N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK |
Production |
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PSMN4R8-100YSE
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N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E |
Production |
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PSMN5R5-60YS
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N-channel LFPAK 60 V, 5.2 mΩ standard level FET |
Production |
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PSMN7R6-100BSE
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N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK |
Production |
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PSMN8R9-100BSE
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N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK |
Production |
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PSMNR51-25YLH
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N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology |
Production |
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PSMNR56-25YLE
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N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E |
Production |
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PSMNR58-30YLH
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N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology |
Production |
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PSMNR60-25YLH
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N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology |
Production |
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PSMNR67-30YLE
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N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E |
Production |
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PSMNR70-30YLH
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N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology |
Production |
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PSMNR70-40SSH
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N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology |
Production |
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PSMNR82-30YLE
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N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMNR89-25YLE
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N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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PSMNR90-40YLH
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N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology |
Production |
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PSMNR90-50SLH
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N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 |
Production |
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PSMNR98-25YLE
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N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 |
Production |
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