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功率MOSFET

NextPower MOSFET:性能可靠,值得信赖

通过大量投资于研发,我们持续不断地利用先进的小信号和功率MOSFET解决方案扩充我们的产品组合。我们种类齐全的产品组合提供当今市场所需的灵活性,让您可以轻松选择最适合您系统的产品。我们市场领先的技术确保提供最高的可靠性和性能,而先进的封装则可以增强电阻和热性能,同时缩小尺寸,降低成本。

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Power MOSFETs
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产品

型号 描述 状态 快速访问
PH2520U N-channel TrenchMOS ultra low level FET Production
PH2925U N-channel TrenchMOS ultra low level FET Production
PHB110NQ08T N-channel TrenchMOS standard level FET Production
PHB191NQ06LT N-channel TrenchMOS logic level FET Production
PHB21N06LT N-channel TrenchMOS logic level FET Production
PHB27NQ10T N-channel TrenchMOS standard level FET Production
PHB29N08T N-channel TrenchMOS standard level FET Production
PHB32N06LT N-channel TrenchMOS logic level FET Production
PHB33NQ20T N-channel TrenchMOS standard level FET Production
PHB45NQ10T N-channel TrenchMOS standard level FET Production
PHB45NQ15T N-channel TrenchMOS standard level FET Production
PHB47NQ10T N-channel TrenchMOS standard level FET Production
PSMN004-60B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN005-75B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN008-75B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN009-100B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN010-80YL N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 Production
PSMN011-30YLC N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN011-60HL N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN011-60ML N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 Production
PSMN011-60MS N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 Production
PSMN011-80YS N-channel LFPAK 80 V 11 mΩ standard level MOSFET Production
PSMN012-100YL N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 Production
PSMN012-100YS N-channel 100V 12mΩ standard level MOSFET in LFPAK Production
PSMN012-100YSF NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package Production
PSMN012-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche Production
PSMN012-60MS N-channel 60 V 12 mOhm standard level MOSFET in LFPAK33 Production
PSMN012-60YS N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET Production
PSMN012-80BS N-channel 80 V 11 mΩ standard level MOSFET in D2PAK Production
PSMN013-100BS N-channel 100V 13.9mΩ standard level MOSFET in D2PAK Production
PSMN013-100YSE N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 Production
PSMN013-30MLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN013-30YLC N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN013-40VLD Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN013-60HL N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60HS N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN013-60YL N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 Production
PSMN013-80YS N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET Production
PSMN014-40HLD N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology Production
PSMN014-40YS N-channel LFPAK 40 V, 14 mΩ standard level MOSFET Production
PSMN014-60HS N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN014-80YL N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56 Production
PSMN015-100B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN015-100YL N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 Production
PSMN015-100YSF NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package Production
PSMN015-60BS N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK Production
PSMN016-100BS N-channel 100V 16 mΩ standard level MOSFET in D2PAK Production
PSMN016-100YS N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK Production
PSMN017-60YS N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET Production
PSMN017-80BS N-channel 80 V 17 mΩ standard level MOSFET in D2PAK Production
PSMN018-80YS N-channel LFPAK 80 V 18 mΩ standard level MOSFET Production
PSMN019-100YL N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 Production
PSMN020-100YS N-channel 100V 20.5mΩ standard level MOSFET in LFPAK Production
PSMN020-30MLC N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology Production
PSMN021-100YL N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56 Production
PSMN025-100HS N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN025-80YL N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 Production
PSMN026-80YS N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET Production
PSMN028-100HS N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN028-100YS N-channel LFPAK 100V 27.5 mΩ standard level MOSFET Production
PSMN029-100HL N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN030-60YS N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET Production
PSMN033-100HL N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN034-100BS N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. Production
PSMN038-100HS N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN038-100YL N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 Production
PSMN039-100YS N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET Production
PSMN040-100MSE N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications Production
PSMN041-80YL N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 Production
PSMN045-100HL N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN045-80YS N-channel LFPAK 80 V 45 mΩ standard level MOSFET Production
PSMN047-100NSE N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement Production
PSMN057-200B N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN059-150Y N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN069-100YS N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET Production
PSMN071-100NSE N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement Production
PSMN075-100MSE N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications Production
PSMN0R7-25YLD N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-25YLC N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN0R9-25YLD N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN0R9-30ULD N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN0R9-30YLD N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN102-200Y N-channel TrenchMOS SiliconMAX standard level FET Production
PSMN1R0-100ASE N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package Development
PSMN1R0-100ASF NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package Development
PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Development
PSMN1R0-25YLD N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLC N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R0-30YLD N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R0-30YLE N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R0-40SSH N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMN1R0-40ULD N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 Production
PSMN1R0-40YLD N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R0-40YSH N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMN1R1-100CSE N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Development
PSMN1R1-25YLC N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R1-30YLE N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R1-40BS N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK Production
PSMN1R2-25YL N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK Production
PSMN1R2-25YLC N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R2-25YLD N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-30YLC N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R2-30YLD N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R2-55SLH N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 Production
PSMN1R3-30YL N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK Production
PSMN1R3-80SSF NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package Development
PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R4-40YLD N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology Production
PSMN1R4-40YSH N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R5-25MLH N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R5-30BLE N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK Production
PSMN1R5-30YLC N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R5-40YSD N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R5-50YLH N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN1R6-25YLE N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN1R6-30MLH N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R7-25YLD N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN1R7-30YL N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK Production
PSMN1R7-40YLB N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN1R7-40YLD N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R7-60BS N-channel 60 V 2 mΩ standard level MOSFET in D2PAK Production
PSMN1R8-30MLH N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology Production
PSMN1R8-40YLC N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN1R8-80SSF NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN1R9-40YSB N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN1R9-40YSD N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN1R9-80SSE N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R0-100SSF NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package Production
PSMN2R0-25MLD N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN2R0-25YLD N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R0-30YLD N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R0-30YLE N-channel 30 V 2 mΩ logic level MOSFET in LFPAK Production
PSMN2R0-40YLB N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R0-40YLD N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R0-55YLH N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E Production
PSMN2R1-30YLE N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMN2R2-25YLC N-channel 25 V, 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN2R2-30YLC N-channel 30 V, 2.15 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN2R2-40BS N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK Production
PSMN2R2-40YSB N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R2-40YSD N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R3-100SSE N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 Production
PSMN2R3-100SSJ N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88 Development
PSMN2R3-80SSF NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package Qualification
PSMN2R4-30MLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN2R4-30YLD N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN2R5-40YLB N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R5-40YLD N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R5-80SSE N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 Qualification
PSMN2R6-100SSF NextPower 100 V, 2.6 mΩ, 200 Amp, N-channel MOSFET in LFPAK88 package Qualification
PSMN2R6-30YLC N-channel 30 V, 2.8 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN2R6-80YSF NextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package Production
PSMN2R7-30BL N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK Production
PSMN2R8-25MLC N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN2R8-40YSB N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN2R8-40YSD N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN2R8-80BS N-channel 80 V, 3 mΩ standard level FET in D2PAK Production
PSMN2R8-80SSF NextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package Qualification
PSMN2R9-100SSE N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 Qualification
PSMN2R9-25YLC N-channel 25 V, 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN2R9-30MLC N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN3R0-30MLC N-channel 30 V, 3.15mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN3R0-30YLD N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN3R0-60BS N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK Production
PSMN3R2-40YLB N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN3R2-40YLD N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN3R3-100SSF NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package Qualification
PSMN3R3-40MLH N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN3R3-40MSH N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN3R3-80BS N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK Production
PSMN3R3-80YSF NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package Production
PSMN3R4-30BLE N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK Production
PSMN3R5-25MLD N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN3R5-40YSB N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology Production
PSMN3R5-40YSD N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology Production
PSMN3R5-80YSF NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package Production
PSMN3R7-100BSE N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK Production
PSMN3R8-100BS N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK Production
PSMN3R9-100YSF NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package Production
PSMN3R9-25MLC N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN4R0-25YLC N-channel 25 V, 4.5 mΩ logic level MOSFET in LFPAK Production
PSMN4R0-30YLD N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN4R0-60YS N-channel LFPAK 60 V, 4.0 mΩ standard level FET Production
PSMN4R1-30YLC N-channel 30 V, 4.35mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN4R1-60YL N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 Production
PSMN4R2-30MLD N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN4R2-40VSH Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) Production
PSMN4R2-80YSE N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN4R3-30BL N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK Production
PSMN4R3-40MLH N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN4R3-40MSH N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN4R4-30MLC N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN4R4-80BS N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK Production
PSMN4R5-30YLC N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN4R5-40BS N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK Production
PSMN4R5-80YSF NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 Production
PSMN4R6-60BS N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100BSE N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK Production
PSMN4R8-100YSE N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E Production
PSMN5R0-40MLH N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN5R0-40MSH N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN5R0-80BS N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK Production
PSMN5R2-60YL N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56 Production
PSMN5R3-25MLD N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN5R4-25YLD N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN5R5-100YSF NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package Production
PSMN5R5-60YS N-channel LFPAK 60 V, 5.2 mΩ standard level FET Production
PSMN5R6-100BS N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK Production
PSMN5R6-60YL N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 Production
PSMN5R8-40YS N-channel LFPAK 40 V, 5.7 mΩ standard level MOSFET Production
PSMN6R0-25YLB N-channel 25 V, 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN6R0-25YLD N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R0-30YLB N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN6R0-30YLD N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R1-25MLD N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN6R1-30YLD N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN6R1-40HL N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN6R4-30MLD N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN6R5-25YLC N-channel 25 V, 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN6R5-80BS N-channel 80V 6.9mΩ standard level MOSFET in D2PAK Production
PSMN6R7-40MLD N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN6R7-40MSD N-channel 40 V, 6.7 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN6R8-40HS N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN7R0-100BS N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. Production
PSMN7R0-30MLC N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN7R0-30YLC N-channel 30 V, 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN7R0-60YS N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFET Production
PSMN7R2-100YSF NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package Production
PSMN7R5-30MLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology Production
PSMN7R5-30YLD N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Production
PSMN7R5-60YL N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56 Production
PSMN7R6-100BSE N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN7R6-60BS N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK Production
PSMN8R0-40BS N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK Production
PSMN8R0-40HL N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R0-80YL N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 Production
PSMN8R2-80YS N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET Production
PSMN8R3-40YS N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET Production
PSMN8R5-40HS N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN8R5-40MLD N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN8R5-40MSD N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology Production
PSMN8R5-60YS N-channel LFPAK 60 V, 8 mΩ standard level MOSFET Production
PSMN8R7-80BS N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK Production
PSMN8R9-100BSE N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK Production
PSMN9R0-25MLC N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMN9R3-60HS N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology Production
PSMN9R5-100BS N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK Production
PSMN9R5-30YLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology Production
PSMN9R8-100YSF NextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package Production
PSMN9R8-30MLC N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology Production
PSMNR51-25YLH N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR55-40SSH N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR56-25YLE N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR58-30YLH N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology Production
PSMNR60-25YLH N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR67-30YLE N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E Production
PSMNR70-30YLH N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology Production
PSMNR70-40SSH N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology Production
PSMNR70-40YSN N-channel 40 V, 0.81 mOhm, 320 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Development
PSMNR82-30YLE N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR89-25YLE N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMNR90-30BL N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK Production
PSMNR90-40YLH N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology Production
PSMNR90-40YSN N-channel 40 V, 0.97 mOhm, 320 A, standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology. Production
PSMNR90-50SLH N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 Production
PSMNR98-25YLE N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 Production
PSMP033-60YE 60 V, P-channel Trench MOSFET Production
PSMP061-60YE 60 V, P-channel Trench MOSFET Production
PXN010-30QL 30 V, N-channel Trench MOSFET Production
PXN011-100QL N-channel 100 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN011-100QS N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN012-100QL N-channel 100 V, 12 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN012-100QS N-channel 100 V, 12 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN012-60QL N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN013-30QLA N-channel 30 V, 13 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN014-100QE 100 V, N-channel Trench MOSFET Production
PXN017-30QL 30 V, N-channel Trench MOSFET Production
PXN018-30QL 30 V, N-channel Trench MOSFET Production
PXN020-100QS N-channel 100 V, 20 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN028-100QL N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33 Production
PXN040-100QS N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33 Production
PXN0R9-30RLA N-channel 30 V, 0.97 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN1R3-30RLA N-channel 30 V, 1.3 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN1R7-30RLA N-channel 30 V, 1.7 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN2R2-30RLA N-channel 30 V, 2.2 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN2R4-30QLA N-channel 30 V, 2.4 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN2R7-30RLA N-channel 30 V, 2.7 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN2R8-100RL N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN2R9-100RS N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56 Development
PXN3R0-30QLA N-channel 30 V, 3.0 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN3R0-30RLA N-channel 30 V, 3.0 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN4R6-30QLA N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN4R6-30RLA N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN4R7-30QL 30 V, N-channel Trench MOSFET Production
PXN5R4-30QL 30 V, N-channel Trench MOSFET Production
PXN5R6-30QLA N-channel 30 V, 5.6 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN6R2-25QL 25 V, N-channel Trench MOSFET Production
PXN6R7-30QL 30 V, N-channel Trench MOSFET Production
PXN7R0-30QLA N-channel 30 V, 7.0 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXN7R2-30RLA N-channel 30 V, 7.2 mOhm, logic level Trench MOSFET in MLPAK56 Development
PXN7R7-25QL 25 V, N-channel Trench MOSFET Production
PXN8R3-30QL 30 V, N-channel Trench MOSFET Production
PXN9R0-30QL 30 V, N-channel Trench MOSFET Production
PXN9R3-30QLA N-channel 30 V, 9.3 mOhm, logic level Trench MOSFET in MLPAK33 Development
PXP010-20QX 20 V, P-channel Trench MOSFET Production
PXP011-20QX 20 V, P-channel Trench MOSFET Production
PXP012-30QL 30 V, P-channel Trench MOSFET Production
PXP013-30QL 30 V, P-channel Trench MOSFET Production
PXP015-30QL 30 V, P-channel Trench MOSFET Production
PXP018-20QX 20 V, P-channel Trench MOSFET Production
PXP018-30QL 30 V, P-channel Trench MOSFET Production
PXP020-20QX 20 V, P-channel Trench MOSFET Production
PXP1500-100QS 100 V, P-channel Trench MOSFET Production
PXP3R7-12QU 12 V, P-channel Trench MOSFET Production
PXP400-100QS 100 V, P-channel Trench MOSFET Production
PXP6R1-30QL 30 V, P-channel Trench MOSFET Production
PXP700-150QS 150 V, P-channel Trench MOSFET Production
PXP8R3-20QX 20 V, P-channel Trench MOSFET Production
PXP9R1-30QL 30 V, P-channel Trench MOSFET Production
Visit our documentation center for all documentation

Application note (18)

文件名称 标题 类型 日期
AN11160 Designing RC Snubbers Application note 2023-02-03
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN50006_JP リニアモードにおけるパワーMOSFET Application note 2022-06-06
AN50006_CN 功率MOSFET的线性模式工作 版 Application note 2022-06-06
AN50006 Power MOSFETs in linear mode Application note 2022-04-12
AN50014 Understanding the MOSFET peak drain current rating Application note 2022-03-28
AN90032 Low temperature soldering, application study Application note 2022-02-22
AN50005 Paralleling power MOSFETs in high power applications Application note 2021-09-13
AN11261 RC Thermal Models Application note 2021-03-18
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
AN90019 LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout Application note 2020-07-20
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN90011 Half-bridge MOSFET switching and its impact on EMC Application note 2020-04-28
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2017-05-05
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2012-05-29

Leaflet (2)

文件名称 标题 类型 日期
nexperia_document_leaflet_LFPAK88_2022_CHN LFPAK88 将功率密度提升到新高度 Leaflet 2022-03-10
nexperia_document_leaflet_LFPAK88_2022 LFPAK88 - Driving power-density to the next level Leaflet 2022-03-09

Marcom graphics (1)

文件名称 标题 类型 日期
LFPAK56_SOT1023_mk plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body Marcom graphics 2017-01-28

Selection guide (1)

文件名称 标题 类型 日期
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

Technical note (4)

文件名称 标题 类型 日期
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
TN90003 The Qrr of a MOSFET: its importance in motor-control circuit designs Technical note 2020-07-21
TN90002 H-bridge motor controller design using Nexperia discrete semiconductors and logic ICs Technical note 2020-02-14
TN90001 LFPAK MOSFET thermal resistance Rth(j-a) simulation, test and optimisation of PCB layout Technical note 2018-05-17

User manual (3)

文件名称 标题 类型 日期
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
The_Power_MOSFET_Handbook_Chinese_Version_201808 The Power MOSFET Handbook - Chinese Version 201808 User manual 2019-11-12
UM90001 Store and transport requirements User manual 2018-04-06

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