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Power MOSFETs
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产品
型号 | 描述 | 状态 | 快速访问 |
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PH2520U | N-channel TrenchMOS ultra low level FET | Production | |
PH2925U | N-channel TrenchMOS ultra low level FET | Production | |
PHB110NQ08T | N-channel TrenchMOS standard level FET | Production | |
PHB191NQ06LT | N-channel TrenchMOS logic level FET | Production | |
PHB21N06LT | N-channel TrenchMOS logic level FET | Production | |
PHB27NQ10T | N-channel TrenchMOS standard level FET | Production | |
PHB29N08T | N-channel TrenchMOS standard level FET | Production | |
PHB32N06LT | N-channel TrenchMOS logic level FET | Production | |
PHB33NQ20T | N-channel TrenchMOS standard level FET | Production | |
PHB45NQ10T | N-channel TrenchMOS standard level FET | Production | |
PHB45NQ15T | N-channel TrenchMOS standard level FET | Production | |
PHB47NQ10T | N-channel TrenchMOS standard level FET | Production | |
PSMN004-60B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN005-75B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN008-75B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN009-100B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN010-80YL | N-channel 80 V, 10 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN011-30YLC | N-channel 30 V 11.6 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN011-60HL | N-channel 60 V, 11.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN011-60ML | N-channel 60 V 11.3 mΩ logic level MOSFET in LFPAK33 | Production | |
PSMN011-60MS | N-channel 60 V 11.3 mΩ standard level MOSFET in LFPAK33 | Production | |
PSMN011-80YS | N-channel LFPAK 80 V 11 mΩ standard level MOSFET | Production | |
PSMN012-100YL | N-channel 100 V, 12 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN012-100YS | N-channel 100V 12mΩ standard level MOSFET in LFPAK | Production | |
PSMN012-100YSF | NextPower 100 V, 11.8 mOhm N-channel MOSFET in LFPAK56 package | Production | |
PSMN012-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology enhanced for repetitive avalanche | Production | |
PSMN012-60MS | N-channel 60 V 12 mOhm standard level MOSFET in LFPAK33 | Production | |
PSMN012-60YS | N-channel LFPAK 60 V, 11.1 mΩ standard level MOSFET | Production | |
PSMN012-80BS | N-channel 80 V 11 mΩ standard level MOSFET in D2PAK | Production | |
PSMN013-100BS | N-channel 100V 13.9mΩ standard level MOSFET in D2PAK | Production | |
PSMN013-100YSE | N-channel 100 V 13 mΩ standard level MOSFET in LFPAK56 | Production | |
PSMN013-30MLC | N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN013-30YLC | N-channel 30 V 13.6 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN013-40VLD | Dual N-channel 40 V, 13 mOhm logic level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN013-60HL | N-channel 60 V, 12.5 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN013-60HS | N-channel 60 V, 10 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN013-60YL | N-channel 60 V, 13 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN013-80YS | N-channel LFPAK 80 V 12.9 mΩ standard level MOSFET | Production | |
PSMN014-40HLD | N-channel 40 V, 13.6 mOhm, logic level MOSFET in LFPAK56D using NextPowerS3 technology | Production | |
PSMN014-40YS | N-channel LFPAK 40 V, 14 mΩ standard level MOSFET | Production | |
PSMN014-60HS | N-channel 60 V, 14 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN014-80YL | N-channel 80 V, 14 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN015-100B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN015-100YL | N-channel 100 V, 15 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN015-100YSF | NextPower 100 V, 15.5 mOhm N-channel MOSFET in LFPAK56 package | Production | |
PSMN015-60BS | N-channel 60 V 14.8 mΩ standard level MOSFET in D2PAK | Production | |
PSMN016-100BS | N-channel 100V 16 mΩ standard level MOSFET in D2PAK | Production | |
PSMN016-100YS | N-channel 100 V 16.3 mΩ standard level MOSFET in LFPAK | Production | |
PSMN017-60YS | N-channel LFPAK 60 V 15.7 mΩ standard level MOSFET | Production | |
PSMN017-80BS | N-channel 80 V 17 mΩ standard level MOSFET in D2PAK | Production | |
PSMN018-80YS | N-channel LFPAK 80 V 18 mΩ standard level MOSFET | Production | |
PSMN019-100YL | N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN020-100YS | N-channel 100V 20.5mΩ standard level MOSFET in LFPAK | Production | |
PSMN020-30MLC | N-channel 30 V 18.1 mΩ logic level MOSFET in LFPAK33 using TrenchMOS Technology | Production | |
PSMN021-100YL | N-channel 100 V, 21 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN025-100HS | N-channel 100 V, 24.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN025-80YL | N-channel 80 V, 25 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN026-80YS | N-channel LFPAK 80 V 27.5 mΩ standard level MOSFET | Production | |
PSMN028-100HS | N-channel 100 V, 27.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN028-100YS | N-channel LFPAK 100V 27.5 mΩ standard level MOSFET | Production | |
PSMN029-100HL | N-channel 100 V, 29 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN030-60YS | N-channel LFPAK 60 V 24.7 mΩ standard level MOSFET | Production | |
PSMN033-100HL | N-channel 100 V, 31 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN034-100BS | N-channel 100 V 34.5 mΩ standard level MOSFET in D2PAK. | Production | |
PSMN038-100HS | N-channel 100 V, 37.6 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN038-100YL | N-channel 100 V 37.5 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN039-100YS | N-channel LFPAK 100 V 39.5 mΩ standard level MOSFET | Production | |
PSMN040-100MSE | N-channel 100 V 36.6 mΩ standard level MOSFET in LFPAK33 designed specifically for high power PoE applications | Production | |
PSMN041-80YL | N-channel 80 V 41 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN045-100HL | N-channel 100 V, 45 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN045-80YS | N-channel LFPAK 80 V 45 mΩ standard level MOSFET | Production | |
PSMN047-100NSE | N-channel 100 V, 53 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | Production | |
PSMN057-200B | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN059-150Y | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN069-100YS | N-channel LFPAK 100 V 72.4 mΩ standard level MOSFET | Production | |
PSMN071-100NSE | N-channel 100 V, 82 mOhm standard level ASFET with enhanced SOA in DFN2020. Designed for high power PoE, inrush management, eFuse and relay replacement | Production | |
PSMN075-100MSE | N-channel 100 V 71 mΩ standard level MOSFET in LFPAK33 designed specifically for PoE applications | Production | |
PSMN0R7-25YLD | N-channel 25 V, 0.72 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN0R9-25YLC | N-channel 25 V 0.99 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN0R9-25YLD | N-channel 25 V, 0.85 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN0R9-30ULD | N-channel 30 V, 0.87 mOhm, 300 A level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | Production | |
PSMN0R9-30YLD | N-channel 30 V, 0.87 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN102-200Y | N-channel TrenchMOS SiliconMAX standard level FET | Production | |
PSMN1R0-100ASE | N-channel, 100 V, 1.04 mOhm, MOSFET with enhanced SOA in CCPAK1212 package | Development | |
PSMN1R0-100ASF | NextPower 100 V, 0.99 mOhm, N-channel MOSFET in CCPAK1212 package | Development | |
PSMN1R0-100CSF | NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package | Development | |
PSMN1R0-25YLD | N-channel 25 V, 1.0 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R0-30YLC | N-channel 30 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R0-30YLD | N-channel 30 V, 1.0 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R0-30YLE | N-channel 30 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R0-40SSH | N-channel 40 V, 1 mΩ, 325 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
PSMN1R0-40ULD | N-channel 40 V, 1.1 mOhm, 280 A logic level Application Specific MOSFET in SOT1023A enhanced package for UL2595 | Production | |
PSMN1R0-40YLD | N-channel 40 V, 1.1 mΩ, 280 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R0-40YSH | N-channel 40 V, 1 mΩ, 290 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Development | |
PSMN1R1-25YLC | N-channel 25 V 1.15 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R1-30YLE | N-channel 30 V, 1.3 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R1-40BS | N-channel 40 V 1.3 mΩ standard level MOSFET in D2PAK | Production | |
PSMN1R2-25YL | N-channel 25 V 1.2 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R2-25YLC | N-channel 25 V 1.3 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R2-25YLD | N-channel 25 V, 1.2 mΩ, 230 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R2-30YLC | N-channel 30 V 1.25mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R2-30YLD | N-channel 30 V, 1.2 mΩ, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R2-55SLH | N-channel 55 V, 1.03 mOhm, 330 A logic level Application Specific MOSFET in LFPAK88 | Production | |
PSMN1R3-30YL | N-channel 30 V 1.3 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R3-80SSF | NextPower 80 V, 1.2 mOhm, 335 Amp, N-channel MOSFET in LFPAK88 package | Development | |
PSMN1R4-30YLD | N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R4-40YLD | N-channel 40 V, 1.4 mΩ, 240 A logic level MOSFET in LFPAK56 using NextPower-S3 technology | Production | |
PSMN1R4-40YSH | N-channel 40 V, 1.4 mOhm, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R5-25MLH | N-channel 25 V, 1.81 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
PSMN1R5-30BLE | N-channel 30 V 1.5 mΩ logic level MOSFET in D2PAK | Production | |
PSMN1R5-30YLC | N-channel 30 V 1.55mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R5-40YSD | N-channel 40 V, 1.5 mΩ, 240 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R5-50YLH | N-channel 50 V, 1.7 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
PSMN1R6-25YLE | N-channel 25 V, 1.9 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN1R6-30MLH | N-channel 30 V, 1.9 mΩ, 160 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
PSMN1R7-25YLD | N-channel 25 V, 1.75 mOhm, 200 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN1R7-30YL | N-channel 30 V 1.7 mΩ logic level MOSFET in LFPAK | Production | |
PSMN1R7-40YLB | N-channel 40 V, 1.8 mOhm, 200 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN1R7-40YLD | N-channel 40 V, 1.8 mΩ, 200 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R7-60BS | N-channel 60 V 2 mΩ standard level MOSFET in D2PAK | Production | |
PSMN1R8-30MLH | N-channel 30 V, 2.1 mΩ, 150 A logic level MOSFET in LFPAK33 using NextPowerS3 technology | Production | |
PSMN1R8-40YLC | N-channel 40 V 1.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN1R8-80SSF | NextPower 80 V, 1.8 mOhm, 270 Amp, N-channel MOSFET in LFPAK88 package | Production | |
PSMN1R9-40YSB | N-channel 40 V, 1.9 mOhm, 200 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN1R9-40YSD | N-channel 40 V, 1.9 mΩ, 200 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN1R9-80SSE | N-channel 80 V, 1.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
PSMN2R0-100SSF | NextPower 100 V, 2.07 mOhm, 267 Amp, N-channel MOSFET in LFPAK88 package | Production | |
PSMN2R0-25MLD | N-channel 25 V, 2.1 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN2R0-25YLD | N-channel 25 V, 2.09 mΩ, 179 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN2R0-30YLD | N-channel 30 V, 2.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN2R0-30YLE | N-channel 30 V 2 mΩ logic level MOSFET in LFPAK | Production | |
PSMN2R0-40YLB | N-channel 40 V, 2.1 mOhm, 180 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN2R0-40YLD | N-channel 40 V, 2.1 mΩ, 180 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN2R0-55YLH | N-channel 55 V, 2.1 mOhm, 200 A continuous, logic level Application Specific MOSFET in LFPAK56E | Production | |
PSMN2R1-30YLE | N-channel 30 V, 2.2 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMN2R2-25YLC | N-channel 25 V, 2.4 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN2R2-30YLC | N-channel 30 V, 2.15 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN2R2-40BS | N-channel 40 V 2.2 mΩ standard level MOSFET in D2PAK | Production | |
PSMN2R2-40YSB | N-channel 40 V, 2.2 mOhm, 180 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN2R2-40YSD | N-channel 40 V, 2.2 mΩ, 180 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN2R3-100SSE | N-channel 100 V, 2.3 mOhm MOSFET with enhanced SOA in LFPAK88 | Production | |
PSMN2R3-100SSJ | N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88 | Development |
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PSMN2R3-80SSF | NextPower 80 V, 2.3 mOhm, 240 Amp, N-channel MOSFET in LFPAK88 package | Qualification | |
PSMN2R4-30MLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN2R4-30YLD | N-channel 30 V, 2.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN2R5-40YLB | N-channel 40 V, 2.6 mOhm, 160 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN2R5-40YLD | N-channel 40 V, 2.6 mΩ, 160 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN2R5-80SSE | N-channel 80 V, 2.5 mOhm MOSFET with enhanced SOA in LFPAK88 | Qualification | |
PSMN2R6-100SSF | NextPower 100 V, 2.6 mΩ, 200 Amp, N-channel MOSFET in LFPAK88 package | Qualification | |
PSMN2R6-30YLC | N-channel 30 V, 2.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN2R6-80YSF | NextPower 80 V, 2.4 mOhm, 231 A, N-channel MOSFET in LFPAK56E package | Production | |
PSMN2R7-30BL | N-channel 30 V 3.0 mΩ logic level MOSFET in D2PAK | Production | |
PSMN2R8-25MLC | N-channel 25 V 2.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN2R8-40YSB | N-channel 40 V, 2.8 mOhm, 160 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN2R8-40YSD | N-channel 40 V, 2.8 mΩ, 160 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN2R8-80BS | N-channel 80 V, 3 mΩ standard level FET in D2PAK | Production | |
PSMN2R8-80SSF | NextPower 80 V, 2.8 mOhm, 205 Amp, N-channel MOSFET in LFPAK88 package | Qualification | |
PSMN2R9-100SSE | N-channel 100 V, 2.9 mOhm MOSFET with enhanced SOA in LFPAK88 | Qualification | |
PSMN2R9-25YLC | N-channel 25 V, 3.15 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN2R9-30MLC | N-channel 30 V 2.95 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN3R0-30MLC | N-channel 30 V, 3.15mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN3R0-30YLD | N-channel 30 V, 3.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN3R0-60BS | N-channel 60 V 3.2 mΩ standard level MOSFET in D2PAK | Production | |
PSMN3R2-40YLB | N-channel 40 V, 3.3 mOhm, 120 A logic level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN3R2-40YLD | N-channel 40 V, 3.3 mΩ, 120 A logic level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN3R3-100SSF | NextPower 100 V, 3.3 mOhm, 180 Amp, N-channel MOSFET in LFPAK88 package | Qualification | |
PSMN3R3-40MLH | N-channel 40 V, 3.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN3R3-40MSH | N-channel 40 V, 3.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN3R3-80BS | N-channel 80 V, 3.5 mΩ standard level MOSFET in D2PAK | Production | |
PSMN3R3-80YSF | NextPower 80 V, 3.1 mOhm, 160 A, N-channel MOSFET in LFPAK56 package | Production | |
PSMN3R4-30BLE | N-channel 30 V, 3.4 mΩ logic level MOSFET in D2PAK | Production | |
PSMN3R5-25MLD | N-channel 25 V, 3.72 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN3R5-40YSB | N-channel 40 V, 3.5 mOhm, 120 A standard level MOSFET in LFPAK56 using optimized NextPowerS3 Schottky-Plus technology | Production | |
PSMN3R5-40YSD | N-channel 40 V, 3.5 mΩ, 120 A standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology | Production | |
PSMN3R5-80YSF | NextPower 80 V, 3.5 mOhm, 150 A, N-channel MOSFET in LFPAK56E package | Production | |
PSMN3R7-100BSE | N-channel 100 V, 3.95 mΩ, standard level MOSFET in D2PAK | Production | |
PSMN3R8-100BS | N-channel 100 V 3.9 mΩ standard level MOSFET in D2PAK | Production | |
PSMN3R9-100YSF | NextPower 100 V, 4.3 mOhm, 120 A, N-channel MOSFET in LFPAK56E package | Production | |
PSMN3R9-25MLC | N-channel 25 V 4.15 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN4R0-25YLC | N-channel 25 V, 4.5 mΩ logic level MOSFET in LFPAK | Production | |
PSMN4R0-30YLD | N-channel 30 V, 4.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN4R0-60YS | N-channel LFPAK 60 V, 4.0 mΩ standard level FET | Production | |
PSMN4R1-30YLC | N-channel 30 V, 4.35mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN4R1-60YL | N-channel 60 V, 4.1 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN4R2-30MLD | N-channel 30 V, 4.2 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN4R2-40VSH | Dual N-channel 40 V, 4.2 mOhm standard level MOSFET in LFPAK56D (half-bridge configuration) | Production | |
PSMN4R2-80YSE | N-channel 80 V, 4.2 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMN4R3-30BL | N-channel 30 V 4.1 mΩ logic level MOSFET in D2PAK | Production | |
PSMN4R3-40MLH | N-channel 40 V, 4.3 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN4R3-40MSH | N-channel 40 V, 4.3 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN4R4-30MLC | N-channel 30 V 4.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN4R4-80BS | N-channel 80 V, 4.5 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R5-30YLC | N-channel 30 V, 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN4R5-40BS | N-channel 40 V 4.5 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R5-80YSF | NextPower 80 V, 4.5 mOhm N-channel MOSFET in LFPAK56 | Production | |
PSMN4R6-60BS | N-channel 60 V, 4.4 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R8-100BSE | N-channel 100 V 4.8 mΩ standard level MOSFET in D2PAK | Production | |
PSMN4R8-100YSE | N-channel 100 V, 4.8 mOhm MOSFET with enhanced SOA in LFPAK56E | Production | |
PSMN5R0-40MLH | N-channel 40 V, 5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN5R0-40MSH | N-channel 40 V, 5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN5R0-80BS | N-channel 80 V, 5.1 mΩ standard level MOSFET in D2PAK | Production | |
PSMN5R2-60YL | N-channel 60 V, 5.2 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN5R3-25MLD | N-channel 25 V, 5.3 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN5R4-25YLD | N-channel 25 V, 5.69 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN5R5-100YSF | NextPower 100 V, 5.6 mOhm N-channel MOSFET in LFPAK56 package | Production | |
PSMN5R5-60YS | N-channel LFPAK 60 V, 5.2 mΩ standard level FET | Production | |
PSMN5R6-100BS | N-channel 100 V 5.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN5R6-60YL | N-channel 60 V, 5.6 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN5R8-40YS | N-channel LFPAK 40 V, 5.7 mΩ standard level MOSFET | Production | |
PSMN6R0-25YLB | N-channel 25 V, 6.1 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN6R0-25YLD | N-channel 25 V, 6.75 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN6R0-30YLB | N-channel 30 V, 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN6R0-30YLD | N-channel 30 V, 6.0 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN6R1-25MLD | N-channel 25 V, 6.8 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN6R1-30YLD | N-channel 30 V, 6.1 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN6R1-40HL | N-channel 40 V, 7.2 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN6R4-30MLD | N-channel 30 V, 6.4 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN6R5-25YLC | N-channel 25 V, 6.5 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN6R5-80BS | N-channel 80V 6.9mΩ standard level MOSFET in D2PAK | Production | |
PSMN6R7-40MLD | N-channel 40 V, 6.7 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN6R7-40MSD | N-channel 40 V, 6.7 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN6R8-40HS | N-channel 40 V, 6.8 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN7R0-100BS | N-channel 100V 6.8 mΩ standard level MOSFET in D2PAK. | Production | |
PSMN7R0-30MLC | N-channel 30 V 7 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN7R0-30YLC | N-channel 30 V, 7.1 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN7R0-60YS | N-channel LFPAK 60 V, 6.4 mΩ standard level MOSFET | Production | |
PSMN7R2-100YSF | NextPower 100 V, 6.9 mOhm N-channel MOSFET in LFPAK56 package | Production | |
PSMN7R5-30MLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK33 using NextPowerS3 Technology | Production | |
PSMN7R5-30YLD | N-channel 30 V, 7.5 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology | Production | |
PSMN7R5-60YL | N-channel 60 V, 7.5 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN7R6-100BSE | N-channel 100 V 7.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN7R6-60BS | N-channel 60 V 7.8 mΩ standard level MOSFET in D2PAK | Production | |
PSMN8R0-40BS | N-channel 40 V 7.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN8R0-40HL | N-channel 40 V, 9.4 mOhm, logic level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R0-80YL | N-channel 80 V, 8 mΩ logic level MOSFET in LFPAK56 | Production | |
PSMN8R2-80YS | N-channel LFPAK 80 V 8.5 mΩ standard level MOSFET | Production | |
PSMN8R3-40YS | N-channel LFPAK 40 V 8.6 mΩ standard level MOSFET | Production | |
PSMN8R5-40HS | N-channel 40 V, 8.5 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN8R5-40MLD | N-channel 40 V, 8.5 mΩ, logic level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN8R5-40MSD | N-channel 40 V, 8.5 mΩ, standard level MOSFET in LFPAK33 using NextPower-S3 technology | Production | |
PSMN8R5-60YS | N-channel LFPAK 60 V, 8 mΩ standard level MOSFET | Production | |
PSMN8R7-80BS | N-channel 80 V 8.7 mΩ standard level MOSFET in D2PAK | Production | |
PSMN8R9-100BSE | N-channel 100 V, 10 mOhm, standard level MOSFET in D2PAK | Production | |
PSMN9R0-25MLC | N-channel 25 V 8.65 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMN9R3-60HS | N-channel 60 V, 9.3 mOhm, standard level MOSFET in LFPAK56D using TrenchMOS technology | Production | |
PSMN9R5-100BS | N-channel 100 V 9.6 mΩ standard level MOSFET in D2PAK | Production | |
PSMN9R5-30YLC | N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK using NextPower technology | Production | |
PSMN9R8-100YSF | NextPower 100 V, 10.2 mOhm N-channel MOSFET in LFPAK56 package | Production | |
PSMN9R8-30MLC | N-channel 30 V 9.8 mΩ logic level MOSFET in LFPAK33 using NextPower Technology | Production | |
PSMNR51-25YLH | N-channel 25 V, 0.57 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
PSMNR55-40SSH | N-channel 40 V, 0.55 mOhm, 500 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
PSMNR56-25YLE | N-channel 25 V, 0.63 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Production | |
PSMNR58-30YLH | N-channel 30 V, 0.67 mΩ, 380 A logic level MOSFET in LFPAK56E using NextPowerS3 technology | Production | |
PSMNR60-25YLH | N-channel 25 V, 0.7 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
PSMNR67-30YLE | N-channel 30 V, 0.70 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56E | Production | |
PSMNR70-30YLH | N-channel 30 V, 0.82 mΩ, 300 A logic level MOSFET in LFPAK56 using NextPowerS3 technology | Production | |
PSMNR70-40SSH | N-channel 40 V, 0.7 mΩ, 425 Amps continuous, standard level MOSFET in LFPAK88 using NextPowerS3 Technology | Production | |
PSMNR70-40YSN | N-channel 40 V, 0.81 mOhm, 320 A standard level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Development | |
PSMNR82-30YLE | N-channel 30 V, 0.87 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMNR89-25YLE | N-channel 25 V, 0.98 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMNR90-30BL | N-channel 30 V 1.0 mΩ logic level MOSFET in D2PAK | Production | |
PSMNR90-40YLH | N-channel 40 V, 0.94 mΩ, 300 A logic level MOSFET in LFPAK56E using NextPower-S3 Schottky-Plus technology | Production | |
PSMNR90-40YSN | N-channel 40 V, 0.97 mOhm, 320 A, standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology. | Production | |
PSMNR90-50SLH | N-channel 50 V, 0.90 mOhm, 410 A logic level Application Specific MOSFET in LFPAK88 | Production | |
PSMNR98-25YLE | N-channel 25 V, 1.1 mOhm, ASFET for hotswap with enhanced SOA in LFPAK56 | Production | |
PSMP033-60YE | 60 V, P-channel Trench MOSFET | Production | |
PSMP061-60YE | 60 V, P-channel Trench MOSFET | Production | |
PXN010-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN011-100QL | N-channel 100 V, 11 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
PXN011-100QS | N-channel 100 V, 11 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
PXN012-100QL | N-channel 100 V, 12 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
PXN012-100QS | N-channel 100 V, 12 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
PXN012-60QL | N-channel 60 V, 11.5 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
PXN013-30QLA | N-channel 30 V, 13 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN014-100QE | 100 V, N-channel Trench MOSFET | Production | |
PXN017-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN018-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN020-100QS | N-channel 100 V, 20 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
PXN028-100QL | N-channel 100 V, 28 mOhm, logic level Trench MOSFET in MLPAK33 | Production | |
PXN040-100QS | N-channel 100 V, 40 mOhm, standard level Trench MOSFET in MLPAK33 | Production | |
PXN0R9-30RLA | N-channel 30 V, 0.97 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN1R3-30RLA | N-channel 30 V, 1.3 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN1R7-30RLA | N-channel 30 V, 1.7 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN2R2-30RLA | N-channel 30 V, 2.2 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN2R4-30QLA | N-channel 30 V, 2.4 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN2R7-30RLA | N-channel 30 V, 2.7 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN2R8-100RL | N-channel 100 V, 2.8 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN2R9-100RS | N-channel 100 V, 2.9 mOhm, standard level Trench MOSFET in MLPAK56 | Development |
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PXN3R0-30QLA | N-channel 30 V, 3.0 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN3R0-30RLA | N-channel 30 V, 3.0 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN4R6-30QLA | N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN4R6-30RLA | N-channel 30 V, 4.6 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN4R7-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN5R4-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN5R6-30QLA | N-channel 30 V, 5.6 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN6R2-25QL | 25 V, N-channel Trench MOSFET | Production | |
PXN6R7-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN7R0-30QLA | N-channel 30 V, 7.0 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXN7R2-30RLA | N-channel 30 V, 7.2 mOhm, logic level Trench MOSFET in MLPAK56 | Development |
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PXN7R7-25QL | 25 V, N-channel Trench MOSFET | Production | |
PXN8R3-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN9R0-30QL | 30 V, N-channel Trench MOSFET | Production | |
PXN9R3-30QLA | N-channel 30 V, 9.3 mOhm, logic level Trench MOSFET in MLPAK33 | Development |
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PXP010-20QX | 20 V, P-channel Trench MOSFET | Production | |
PXP011-20QX | 20 V, P-channel Trench MOSFET | Production | |
PXP012-30QL | 30 V, P-channel Trench MOSFET | Production | |
PXP013-30QL | 30 V, P-channel Trench MOSFET | Production | |
PXP015-30QL | 30 V, P-channel Trench MOSFET | Production | |
PXP018-20QX | 20 V, P-channel Trench MOSFET | Production | |
PXP018-30QL | 30 V, P-channel Trench MOSFET | Production | |
PXP020-20QX | 20 V, P-channel Trench MOSFET | Production | |
PXP1500-100QS | 100 V, P-channel Trench MOSFET | Production | |
PXP3R7-12QU | 12 V, P-channel Trench MOSFET | Production | |
PXP400-100QS | 100 V, P-channel Trench MOSFET | Production | |
PXP6R1-30QL | 30 V, P-channel Trench MOSFET | Production | |
PXP700-150QS | 150 V, P-channel Trench MOSFET | Production | |
PXP8R3-20QX | 20 V, P-channel Trench MOSFET | Production | |
PXP9R1-30QL | 30 V, P-channel Trench MOSFET | Production |
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Visit our documentation center for all documentation
Application note (18) |
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---|---|---|---|
文件名称 | 标题 | 类型 | 日期 |
AN11160 | Designing RC Snubbers | Application note | 2023-02-03 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN50006_JP | リニアモードにおけるパワーMOSFET | Application note | 2022-06-06 |
AN50006_CN | 功率MOSFET的线性模式工作 版 | Application note | 2022-06-06 |
AN50006 | Power MOSFETs in linear mode | Application note | 2022-04-12 |
AN50014 | Understanding the MOSFET peak drain current rating | Application note | 2022-03-28 |
AN90032 | Low temperature soldering, application study | Application note | 2022-02-22 |
AN50005 | Paralleling power MOSFETs in high power applications | Application note | 2021-09-13 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11158_ZH | Understanding power MOSFET data sheet parameters | Application note | 2021-01-04 |
AN90016 | Maximum continuous currents in NEXPERIA LFPAK power MOSFETs | Application note | 2020-09-03 |
AN90019 | LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout | Application note | 2020-07-20 |
AN11158 | Understanding power MOSFET data sheet parameters | Application note | 2020-07-06 |
AN90011 | Half-bridge MOSFET switching and its impact on EMC | Application note | 2020-04-28 |
AN11243 | Failure signature of Electrical Overstress on Power MOSFETs | Application note | 2017-12-21 |
AN90001 | Designing in MOSFETs for safe and reliable gate-drive operation | Application note | 2017-05-05 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
AN11172 | Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) | Application note | 2012-05-29 |
Leaflet (2) |
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文件名称 | 标题 | 类型 | 日期 |
nexperia_document_leaflet_LFPAK88_2022_CHN | LFPAK88 将功率密度提升到新高度 | Leaflet | 2022-03-10 |
nexperia_document_leaflet_LFPAK88_2022 | LFPAK88 - Driving power-density to the next level | Leaflet | 2022-03-09 |
Marcom graphics (1) |
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文件名称 | 标题 | 类型 | 日期 |
LFPAK56_SOT1023_mk | plastic, single-ended surface-mounted package (LFPAK56); 4 leads; 1.27 mm pitch; 4.58 mm x 5.13 mm x 1.03 mm body | Marcom graphics | 2017-01-28 |
Selection guide (1) |
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文件名称 | 标题 | 类型 | 日期 |
Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Technical note (4) |
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文件名称 | 标题 | 类型 | 日期 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
TN90003 | The Qrr of a MOSFET: its importance in motor-control circuit designs | Technical note | 2020-07-21 |
TN90002 | H-bridge motor controller design using Nexperia discrete semiconductors and logic ICs | Technical note | 2020-02-14 |
TN90001 | LFPAK MOSFET thermal resistance Rth(j-a) simulation, test and optimisation of PCB layout | Technical note | 2018-05-17 |
User manual (3) |
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文件名称 | 标题 | 类型 | 日期 |
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
The_Power_MOSFET_Handbook_Chinese_Version_201808 | The Power MOSFET Handbook - Chinese Version 201808 | User manual | 2019-11-12 |
UM90001 | Store and transport requirements | User manual | 2018-04-06 |