Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationPSMN1R1-100CSE
N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R1-100CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).
PSMN1R1-100CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I²R losses and deliver optimum efficiency when turned fully ON.
Features and benefits
Fully optimized Safe Opertating Area (SOA) for superior linear mode operation
Low RDSon for low I²R conduction losses
CCPAK1212i package for applications that demand the highest performance and reliability
Inverted package, suitable for top-side cooling
Applications
Hot swap
Load switch
Soft start
E-fuse
Telecommunication systems based on a 48 V backplane/supply rail
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSMN1R1-100CSE | SOT8005A | CCPAK1212i | Development | N | 1 | 100 | 1.09 | 175 | 400 | 49 | 316 | 1070 | 122 | 2.6 | 24498 | 5222 | 2024-02-07 |
文档 (1)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSMN1R1-100CSE | N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package | Data sheet | 2024-02-07 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN1R1-100CSE
N-channel, 100 V, 1.09 mOhm, MOSFET with enhanced SOA in CCPAK1212i package
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
|---|
