• NG体育娱乐，ng体育平台

    ×

    PSMN1R0-100CSF

    NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package

    NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

    Features and benefits

    • Low Qrr for higher efficiency and lower spiking

    • 400 Amps ID(max) continuous current rating

    • Low QG × RDSon FOM for high efficiency switching applications

    • Strong avalanche energy rating (Eas)

    • Avalanche rated and 100% tested

    • Ha-free and RoHS compliant CCPAK1212i package

    • Inverted package, suitable for top-side cooling

    Applications

    • Battery protection

    • High power full and half-bridge configurations

    • BLDC motor control

    • OR-ing

    参数类型

    型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Ciss [typ] (pF) Coss [typ] (pF) Release date
    PSMN1R0-100CSF SOT8005A CCPAK1212i Development N 1 100 1.04 175 400 61.999996 323 1071 110 3 23154 5201 2024-02-07

    文档 (1)

    文件名称 标题 类型 日期
    PSMN1R0-100CSF NextPower 100 V, 1.04 mOhm, N-channel MOSFET in CCPAK1212i package Data sheet 2024-02-07

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    No documents available

    订购、定价与供货

    样品

    作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

    如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

    NG体育娱乐，ng体育平台