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Click here for more informationPSMN2R3-100SSJ
N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88
N-channel enhancement mode MOSFET in a LFPAK88 package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for enhanced dynamic current sharing in parallel. The PSMN2R3-100SSJ delivers very low RDSon and high current capability along with enhanced dynamic current sharing in a high-reliability copper-clip LFPAK88 package. The dynamic current sharing feature is a passive solution and inherent in the optimised design and does not rely upon special selections or control and feedback methods.
Features and benefits
Fully enhanced for dynamic current sharing in parallel
Suitable for 10 V gate drive
Low RDSon for low I²R conduction losses
LFPAK88 package for applications that demand the highest performance and reliability
Applications
High power motor drives
Fork lift trucks and material moving equipment
Industrial drives and Automation
High power tools and machines
E-bike and mobility
E-Fuse and high current switching
参数类型
| 型号 | Product status | Release date |
|---|---|---|
| PSMN2R3-100SSJ | Development | 2023-05-24 |
文档
No documents available
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSMN2R3-100SSJ
N-channel 100 V, 2.3 mOhm Application Specific MOSFET (ASFET) in LFPAK88
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
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