• NG体育娱乐，ng体育平台

    ×

    Automotive ASFETs for Airbag Applications

    Enhanced SOA for improved linear mode performance

    When choosing a MOSFET to regulate the supply voltage to the squibs in an airbag system, the choice has traditionally been limited to older generations of silicon technology, such as the legacy wire-bonded DPAK package. This is due to the safe operating area (SOA) being greater for trench technologies with wider cell pitch when operating in linear mode. The MOSFET must be able to handle a current proportional to the number of squibs in the system, whilst regulating their supply voltage for long enough to activate the airbags. Nexperia have designed a range of Application Specific MOSFETS (ASFETs) to address the specialised needs of airbag applications, focused on enhanced SOA performance for improved linear mode.

    ASFETs for Airbag Applications

    用于以太网供电(PoE)的ASFET专为配合使用最新的高功率、PSE控制器而设计：

    • MOSFET的主要作用是在向网络添加电容负载时安全地控制冲击电流
    • 扩展的增强安全操作区(SOA)能够承受短路故障情况引起的功耗，直到PSE控制器检测到故障并关闭为止
    • 增强的保护——我们的MOSFET提供的保护功能超过竞争性器件两倍多。在电缆短路故障期间，我们用于PoE的ASFET可在+60 ℃的环境温度下安全耗散高达30 W的电力长达20 ms
    • 要将更多高功率PoE端口压缩到紧凑型路由器/交换机中，需要LFPAK33封装的热效率和紧凑尺寸能够提供更高的功率密度。
    		   
        

    电源设备/以太网供电

     

    参数搜索

    Automotive ASFETs for Airbag Applications
    数据加载中，请稍候...
    参数搜索不可用。

    产品

    型号 描述 状态 快速访问
    BUK9M20-60EL Single N-channel 60 V, 13 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
    BUK9M31-60EL Single N-channel 60 V, 21 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
    BUK9M67-60EL Single N-channel 60 V, 44 mOhm logic level MOSFET in LFPAK33 using Enhanced SOA technology Production
    BUK9Y13-60EL Single N-channel 60 V, 7.9 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
    BUK9Y22-60EL Single N-channel 60 V, 15 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
    BUK9Y7R0-60EL Single N-channel 60 V, 4.5 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
    BUK9Y8R8-60EL Single N-channel 60 V, 5.6 mOhm logic level MOSFET in LFPAK56 using Enhanced SOA technology Production
    Visit our documentation center for all documentation

    Application note (10)
    文件名称 标题 类型 日期
    AN90003 LFPAK MOSFET thermal design guide Application note 2023-08-22
    AN50016 MOSFETs for airbag applications Application note 2022-05-19
    AN50006 Power MOSFETs in linear mode Application note 2022-04-12
    AN11261 RC Thermal Models Application note 2021-03-18
    AN50001 Reverse battery protection in automotive applications Application note 2021-01-12
    AN90016 Maximum continuous currents in NEXPERIA LFPAK power MOSFETs Application note 2020-09-03
    AN90019 LFPAK MOSFET thermal resistance - simulation, test and optimization of PCB layout Application note 2020-07-20
    AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
    AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
    AN90001 Designing in MOSFETs for safe and reliable gate-drive operation Application note 2017-05-05

    如果您有支持方面的疑问，请告知我们。如需获得设计支持，请告知我们并填写应答表，我们会尽快回复您。

    或NG体育娱乐，ng体育平台获得进一步支持。


    交叉参考

    NG体育娱乐，ng体育平台