NG体育娱乐,ng体育平台

双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

TL431BSDT

Adjustable precision shunt regulator

Three-terminal shunt regulator family with an output voltage range between

Vref = 2.495 V and 36 V, to be set by two external resistors.

Reference voltage

tolerance (Vref)

Temperature range (Tamb)

Pinning configuration

0 ° C to 70 °C

-40 ° C to 85 °C

-40 ° C to 125 °C

2.0 %

TL431CDBZR

TL431IDBZR

TL431QDBZR

normal pinning

TL431FDT

normal pinning

TL431MFDT

mirrored pinning

1.0 %

TL431ACDBZR

TL431AIDBZR

TL431AQDBZR

normal pinning

TL431AFDT

normal pinning

TL431AMFDT

mirrored pinning

0.5 %

TL431BCDBZR

TL431BIDBZR

TL431BQDBZR

normal pinning

TL431BFDT

normal pinning

TL431BMFDT

mirrored pinning

此产品已停产

Features and benefits

  • Programmable output voltage up to 36 V

  • Three different reference voltage tolerances:

    • Standard grade: 2 %

    • A-Grade: 1 %

    • B-Grade: 0.5 %

  • Typical temperature drift: 9 mV (in a range of 0 °C up to 70 °C)

  • Low output noise

  • Typical output impedance: 0.2 Ω

  • Sink current capability: 1 mA to 100 mA

  • AEC-Q100 qualified (grade 1)

Applications

  • Shunt regulator

  • Precision current limiter

  • Precision constant current sink

  • Isolated feedback loop for Switch Mode Power Supply (SMPS)

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
TL431BSDT TL431BSDT,215
(935290968215)
Obsolete no package information

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
TL431BSDT TL431BSDT,215 TL431BSDT rohs rhf rhf
品质及可靠性免责声明

文档 (1)

文件名称 标题 类型 日期
TL431_FAM Adjustable precision shunt regulator Data sheet 2024-04-30

支持

如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。

模型

No documents available

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

NG体育娱乐,ng体育平台