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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC10ADB

Triple 3-input NAND gate

The 74LVC10A provides three 3-input NAND functions.

Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V applications.

此产品已停产

Features and benefits

  • Wide supply voltage range from 1.2 V to 3.6 V

  • Inputs accept voltages up to 5.5 V

  • CMOS low power consumption

  • Direct interface with TTL levels

  • Latch-up performance exceeds 250 mA

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)

    • JESD8-5A (2.3 V to 2.7 V)

    • JESD8-C/JESD36 (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC10ADB 74LVC10ADB,112
(935260744112)		 Obsolete no package information
74LVC10ADB,118
(935260744118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC10ADB 74LVC10ADB,112 74LVC10ADB rohs rhf rhf
74LVC10ADB 74LVC10ADB,118 74LVC10ADB rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
74LVC10A Triple 3-input NAND gate Data sheet 2024-01-24
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN263 Power considerations when using CMOS and BiCMOS logic devices Application note 2023-02-07
lvc10a lvc10a IBIS model IBIS model 2013-04-08
lvc lvc Spice model SPICE model 2013-05-07

支持

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模型

文件名称 标题 类型 日期
lvc10a lvc10a IBIS model IBIS model 2013-04-08
lvc lvc Spice model SPICE model 2013-05-07

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.