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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HCT2G00GD

Dual 2-input NAND gate

The 74HC2G00; 74HCT2G00 is a dual 2-input NAND gate. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess of VCC.

此产品已停产

Features and benefits

  • Wide supply voltage range from 2.0 V to 6.0 V

  • CMOS low power dissipation

  • Input levels:

    • For 74HC2G00: CMOS level

    • For 74HCT2G00: TTL level

  • Symmetrical output impedance

  • High noise immunity

  • Balanced propagation delays

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 Package name
74HCT2G00GD XSON8

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74HCT2G00GD 74HCT2G00GD,125
(935286847125)		 Obsolete T00 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74HCT2G00GD 74HCT2G00GD,125 74HCT2G00GD rohs rhf rhf
品质及可靠性免责声明

文档 (5)

文件名称 标题 类型 日期
74HC_HCT2G00 Dual 2-input NAND gate Data sheet 2024-08-13
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

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模型

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.