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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AHCT2G00GD

Dual 2-input NAND gate

The 74AHC2G00; 74AHCT2G00 are high-speed Si-gate CMOS devices. They provide two 2-input NAND gates.

The AHC device has CMOS input switching levels and supply voltage range 2 V to 5.5 V.

The AHCT device has TTL input switching levels and supply voltage range 4.5 V to 5.5 V.

此产品已停产

Features and benefits

  • Symmetrical output impedance

  • High noise immunity

  • Low power dissipation

  • Balanced propagation delays

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

参数类型

型号 Package name
74AHCT2G00GD XSON8

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74AHCT2G00GD 74AHCT2G00GD,125
(935288558125)		 Obsolete C00 Standard Procedure Standard Procedure SOT996-2
XSON8
(SOT996-2) 		SOT996-2 SOT996-2_125

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74AHCT2G00GD 74AHCT2G00GD,125 74AHCT2G00GD rohs rhf rhf
品质及可靠性免责声明

文档 (6)

文件名称 标题 类型 日期
74AHC_AHCT2G00 Dual 2-input NAND gate Data sheet 2023-08-31
AN10161 PicoGate Logic footprints Application note 2002-10-29
AN11106 Pin FMEA for AHC/AHCT family Application note 2019-01-09
ahct2g00 ahct2g00 IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT996-2 plastic, leadless extremely thin small outline package; 8 terminals; 0.5 mm pitch; 3 mm x 2 mm x 0.5 mm body Package information 2020-04-21

支持

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模型

文件名称 标题 类型 日期
ahct2g00 ahct2g00 IBIS model IBIS model 2013-04-08

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.