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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74AUP2GU04GN

Low-power dual unbuffered inverter

The 74AUP2GU04 is a dual unbuffered inverter. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

Features and benefits

  • Wide supply voltage range from 0.8 V to 3.6 V

  • CMOS low power dissipation

  • High noise immunity

  • Overvoltage tolerant inputs to 3.6 V

  • Low noise overshoot and undershoot < 10 % of VCC

  • Latch-up performance exceeds 100 mA per JESD 78 Class II

  • Low static power consumption; ICC = 0.9 μA (maximum)

  • Complies with JEDEC standards:

    • JESD8-12 (0.8 V to 1.3 V)

    • JESD8-11 (0.9 V to 1.65 V)

    • JESD8-7 (1.2 V to 1.95 V)

    • JESD8-5 (1.8 V to 2.7 V)

    • JESD8-B (2.7 V to 3.6 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 VCC (V) Logic switching levels Output drive capability (mA) fmax (MHz) Nr of bits Power dissipation considerations Tamb (°C) Package name
74AUP2GU04GN 0.8 - 3.6 CMOS ± 1.9 70 2 ultra low -40~125 XSON6

PCB Symbol, Footprint and 3D Model

Model Name 描述

文档 (5)

文件名称 标题 类型 日期
74AUP2GU04 Low-power dual unbuffered inverter Data sheet 2023-07-21
AN11052 Pin FMEA for AUP family Application note 2019-01-09
aup2gu04 aup2gu04 IBIS model IBIS model 2014-12-21
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
74AUP2GU04GN_Nexperia_Product_Reliability 74AUP2GU04GN Nexperia Product Reliability Quality document 2024-06-16

支持

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模型

文件名称 标题 类型 日期
aup2gu04 aup2gu04 IBIS model IBIS model 2014-12-21

PCB Symbol, Footprint and 3D Model

Model Name 描述

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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