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Low-power dual unbuffered inverter
The 74AUP2GU04 is a dual unbuffered inverter. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
CMOS low power dissipation
High noise immunity
Overvoltage tolerant inputs to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
Latch-up performance exceeds 100 mA per JESD 78 Class II
Low static power consumption; ICC = 0.9 μA (maximum)
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
参数类型
型号 | VCC (V) | Logic switching levels | Output drive capability (mA) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Package name |
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74AUP2GU04GN | 0.8 - 3.6 | CMOS | ± 1.9 | 70 | 2 | ultra low | -40~125 | XSON6 |
PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
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Series
文档 (5)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AUP2GU04 | Low-power dual unbuffered inverter | Data sheet | 2023-07-21 |
AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
aup2gu04 | aup2gu04 IBIS model | IBIS model | 2014-12-21 |
Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
74AUP2GU04GN_Nexperia_Product_Reliability | 74AUP2GU04GN Nexperia Product Reliability | Quality document | 2024-06-16 |
支持
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模型
文件名称 | 标题 | 类型 | 日期 |
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aup2gu04 | aup2gu04 IBIS model | IBIS model | 2014-12-21 |
PCB Symbol, Footprint and 3D Model
Model Name | 描述 |
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订购、定价与供货
样品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.