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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC2G66GD

Bilateral switch

The 74LVC2G66 is a dual single pole, single-throw analog switch. Each switch has two input/output terminals (nY and nZ) and a digital enable input (nE). When nE is LOW, the analog switch is turned off. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

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Features and benefits

  • Wide supply voltage range from 1.65 V to 5.5 V

  • Very low ON resistance:

    • 7.5 Ω (typical) at VCC = 2.7 V

    • 6.5 Ω (typical) at VCC = 3.3 V

    • 6 Ω (typical) at VCC = 5 V

  • Switch current capability of 32 mA

  • Overvoltage tolerant inputs to 5.5 V

  • High noise immunity

  • CMOS low power consumption

  • TTL interface compatibility at 3.3 V

  • Latch-up performance meets requirements of JESD78 Class I

  • Complies with JEDEC standards:

    • JESD8-7 (1.65 V to 1.95 V)

    • JESD8-5 (2.3 V to 2.7 V)

    • JESD8C (2.7 V to 3.6 V)

    • JESD36 (4.5 V to 5.5 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

文档 (3)

文件名称 标题 类型 日期
74LVC2G66 Bilateral switch Data sheet 2023-08-23
AN11009 Pin FMEA for LVC family Application note 2019-01-09
lvc2g66 74LVC2G66 IBIS model IBIS model 2015-02-19

支持

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模型

文件名称 标题 类型 日期
lvc2g66 74LVC2G66 IBIS model IBIS model 2015-02-19

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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