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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74LVC162373ADL

16-bit D-type transparent latch; 30 Ohm series termination resistors; 5 V tolerant inputs/outputs; 3-state

The 74LVC162373A and 74LVCH162373A are 16-bit D-type transparent latches with 30 Ω termination resistors and 3-state outputs. The 74LVCH162373A has separate D-type inputs with bus hold for each latch. Both devices can be used as two 8-bit transparent latches or a single 16-bit transparent latch. Both devices feature two latch enables (1LE and 2LE) and two output enables (1OE and 2OE), each controlling 8-bits. When nLE is HIGH, data at the inputs enter the latches. In this condition the latches are transparent, a latch output will change each time its corresponding D-input changes. When nLE is LOW the latches store the information that was present at the inputs a set-up time preceding the HIGH-to-LOW transition of nLE. A HIGH on nOE causes the outputs to assume a high-impedance OFF-state. Operation of the nOE input does not affect the state of the latches. Inputs can be driven from either 3.3 V or 5 V devices. This feature allows the use of these devices as translators in mixed 3.3 V and 5 V environments.

Schmitt-trigger action at all inputs makes the circuit tolerant of slower input rise and fall times.

These devices are fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the devices when they are powered down.

此产品已停产

Features and benefits

  • Overvoltage tolerant inputs to 5.5 V

  • Wide supply voltage range from 1.2 V to 3.6 V

  • CMOS low power consumption

  • Multibyte flow-through standard pinout architecture

  • Multiple low inductance supply pins for minimum noise and ground bounce

  • Direct interface with TTL levels

  • All data inputs have bus hold (74LVCH162373A only)

  • IOFF circuitry provides partial Power-down mode operation

  • Complies with JEDEC standard:

    • JESD8-7A (1.65 V to 1.95 V)
    • JESD8-5A (2.3 V to 2.7 V)
    • JESD8-C/JESD36 (2.7 V to 3.6 V)
  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Specified from -40 °C to +85 °C and -40 °C to +125 °C

参数类型

型号 Package name
74LVC162373ADL SSOP48

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号,(订购码(12NC)) 状态 标示 封装 外形图 回流焊/波峰焊 包装
74LVC162373ADL 74LVC162373ADL,112
(935237710112)
Obsolete LVC162373A SOT370-1
SSOP48
(SOT370-1)
SOT370-1 SSOP-TSSOP-VSO-REFLOW
SSOP-TSSOP-VSO-WAVE
暂无信息
74LVC162373ADL,118
(935237710118)
Obsolete LVC162373A SOT370-1_118

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74LVC162373ADL 74LVC162373ADL,112 74LVC162373ADL rohs rhf rhf
74LVC162373ADL 74LVC162373ADL,118 74LVC162373ADL rohs rhf rhf
品质及可靠性免责声明

文档 (8)

文件名称 标题 类型 日期
74LVC_LVCH162373A 16-bit D-type transparent latch; 30 Ohm series termination resistors; 5 V tolerant inputs/outputs; 3-state Data sheet 2024-04-03
AN11009 Pin FMEA for LVC family Application note 2019-01-09
AN263 Power considerations when using CMOS and BiCMOS logic devices Application note 2023-02-07
lvc162373a lvc162373a IBIS model IBIS model 2013-04-08
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
SOT370-1 plastic, shrink small outline package; 48 leads; 0.635 mm pitch; 15.9 mm x 7.5 mm x 2.8 mm body Package information 2020-04-21
SSOP-TSSOP-VSO-REFLOW Footprint for reflow soldering Reflow soldering 2009-10-08
SSOP-TSSOP-VSO-WAVE Footprint for wave soldering Wave soldering 2009-10-08

支持

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模型

文件名称 标题 类型 日期
lvc162373a lvc162373a IBIS model IBIS model 2013-04-08

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.