无论是为下一代新能源电动车设计的电机驱动/控制器，还是为最新5G电信网络设计的电源，安世半导体的GaN FET将是您解决方案的关键。提供高功率性能和高频开关，我们常态关断的GaN FET产品的设计和结构，可确保您的设计应用低成本的标准栅极驱动器。
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GaN FETs
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Visit our documentation center for all documentation
Application note (6) |
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|---|---|---|---|
| 文件名称 | 标题 | 类型 | 日期 |
| AN90041 | Gate drive circuit design for Nexperia 650 V Enhancement mode (e-mode) GaN FETs | Application note | 2023-05-09 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
Leaflet (4) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_document_leaflet_GaN_CCPAK_2023_CHN | CCPAK GaN FETs Chinese | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaN_CCPAK_2023 | CCPAK GaN FETs | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023_CHN | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
| nexperia_document_leaflet_GaNFETs_2023 | Power GaN FETs leaflet | Leaflet | 2023-10-25 |
Marcom graphics (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
Other type (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| GaNFET_evalsuation_board_Terms_Of_Use | GaN FET evalsUATION BOARD TERMS OF USE | Other type | 2023-10-10 |
Selection guide (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
Technical note (1) |
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| 文件名称 | 标题 | 类型 | 日期 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
User manual (4) |
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| 文件名称 | 标题 | 类型 | 日期 |
| UM90028 | NX-DP-GAN039-TSC double pulse evalsuation board with top-side cooled CCPAK GaN FETs | User manual | 2024-01-09 |
| UM90007 | NX-HB-GAN039-BSCUL 3.5 kW half-bridge evalsuation board with bottom-side cooled GaN FETs | User manual | 2023-12-04 |
| UM90024 | 4 kW analogue bridgeless totem-pole PFC evalsuation board | User manual | 2023-11-21 |
| Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 | MOSFET & GaN FET Application Handbook | User manual | 2020-11-05 |
White paper (5) |
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| 文件名称 | 标题 | 类型 | 日期 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |