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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

PESD5V0S2BQA

Protection against high surge currents in ultra small DFN1010D-3 package

Two bidirectional ElectroStatic Discharge (ESD) protection diodes designed to protect two signal lines from the damage caused by ESD and other transients.

The device is housed in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package with visible and solderable side pads.

Features and benefits

  • Bidirectional ESD protection of two lines

  • Ultra small SMD plastic package

  • ESD protection up to 30 kV

  • AEC-Q101 qualified

  • IEC 61000-4-5 (surge): IPPM = 14 A

  • IEC 61000-4-5 (surge): IPPM = 28 A combined lines

  • Ultra low leakage current: IRM = 1 nA

Applications

  • Computers and peripherals

  • Audio and video equipment

  • Cellular handsets and accessories

  • Communication systems

  • Portable electronics