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30 V, P-channel Trench MOSFET
P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020M-6 (SOT1220-2) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
Features and benefits
Logic-level compatible
Trench MOSFET technology
Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.65 mm
Exposed drain pad for excellent thermal conduction
Applications
Charging switch for portable devices
DC-to-DC converters
Power management in battery-driven portable devices
Computing power management
参数类型
| 型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V; @25 C (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PMPB12R5EP | SOT1220-2 | DFN2020M-6 | End of life | P | 1 | -30 | 20 | 15 | 21 | 150 | -12.5 | 5.4 | 29 | 1.9 | -1.6 | N | 1392 | 169 | 2021-03-01 |
封装
下表中的所有产品型号均已停产 。
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PMPB12R5EP | PMPB12R5EPX (934662561115) |
Discontinued / End-of-life | ZN |
DFN2020M-6 (SOT1220-2) |
SOT1220-2 | SOT1220-2_115 |
Series
文档 (6)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMPB12R5EP | 30 V, P-channel Trench MOSFET | Data sheet | 2021-03-01 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
| nexperia_document_leaflet_SsMOS_for_mobiles_2022-CHN | 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 | Leaflet | 2022-07-04 |
| nexperia_document_leaflet_SsMOS_for_mobiles_2022 | High volume small-signal MOSFETs for mobiles and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
| SOT1220-2 | plastic thermal enhanced ultra thin small outline package; no leads;6 terminals; body 2 x 2 x 0.65 mm | Package information | 2020-06-17 |
| PMPB12R5EP | PMPB12R5EP SPICE model | SPICE model | 2021-03-04 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PMPB12R5EP | PMPB12R5EP SPICE model | SPICE model | 2021-03-04 |
| SOT1220-2 | 3D model for products with SOT1220-2 package | Design support | 2023-02-02 |
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PMPB12R5EP
30 V, P-channel Trench MOSFET
从安世半导体购买
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