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    双极性晶体管

    二极管

    ESD保护、TVS、滤波和信号调节ESD保护

    MOSFET

    氮化镓场效应晶体管(GaN FET)

    绝缘栅双极晶体管(IGBTs)

    模拟和逻辑IC

    汽车应用认证产品(AEC-Q100/Q101)

    BUK7E5R2-100E

    N-channel TrenchMOS standard level FET

    Standard level N-channel MOSFET in a SOT226 package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

    此产品已停产

    Features and benefits

    • AEC-Q101 compliant
    • Repetitive avalanche rated
    • Suitable for thermally demanding environments due to 175 °C rating
    • True standard level gate with VGS(th) rating of greater than 1 V at 175 °C

    Applications

    • 12V, 24V and 48V Automotive systems
    • Electric and electro-hydraulic power steering
    • Motors, lamps and solenoid control
    • Start-Stop micro-hybrid applications
    • Transmission control
    • Ultra high performance power switching

    参数类型

    型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
    BUK7E5R2-100E SOT226 I2PAK End of life N 1 100 5.2 175 120 65 180 349 191 3 Y 8860 770 2012-09-05

    封装

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
    BUK7E5R2-100E BUK7E5R2-100E,127
    (934066518127)    		 Obsolete SOT226
    I2PAK
    (SOT226)     		SOT226 暂无信息

    环境信息

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号 化学成分 RoHS RHF指示符
    BUK7E5R2-100E BUK7E5R2-100E,127 BUK7E5R2-100E rohs rhf
    品质及可靠性免责声明

    文档 (19)

    文件名称 标题 类型 日期
    BUK7E5R2-100E N-channel TrenchMOS standard level FET Data sheet 2017-04-20
    AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
    AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
    AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
    AN11156 Using Power MOSFET Zth Curves Application note 2021-01-04
    AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
    AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
    AN11160 Designing RC Snubbers Application note 2024-10-21
    AN11172 Mounting instructions for SOT78 (TO-220AB); SOT186A (TO-220F) Application note 2021-05-21
    AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
    AN11261 RC Thermal Models Application note 2021-03-18
    AN11599 Using power MOSFETs in parallel Application note 2016-07-13
    SOT226 3D model for products with SOT226 package Design support 2017-06-30
    Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
    SOT226 plastic, single-ended package (I2PAK); 3 terminals; 2.54 mm pitch; 11 mm x 10 mm x 4.3 mm body Package information 2020-04-21
    BUK7E5R2-100E BUK7E5R2-100E Spice model SPICE model 2012-10-05
    TN00008 Power MOSFET frequently asked questions and answers Technical note 2024-08-09
    BUK7E5R2-100E_RC_Thermal_Model BUK7E5R2-100E Thermal design model Thermal design 2021-01-18
    BUK7E5R2-100E BUK7E5R2-100E Thermal model Thermal model 2012-10-08

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    文件名称 标题 类型 日期
    BUK7E5R2-100E BUK7E5R2-100E Spice model SPICE model 2012-10-05
    BUK7E5R2-100E_RC_Thermal_Model BUK7E5R2-100E Thermal design model Thermal design 2021-01-18
    BUK7E5R2-100E BUK7E5R2-100E Thermal model Thermal model 2012-10-08
    SOT226 3D model for products with SOT226 package Design support 2017-06-30

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.