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    双极性晶体管

    二极管

    ESD保护、TVS、滤波和信号调节ESD保护

    MOSFET

    氮化镓场效应晶体管(GaN FET)

    绝缘栅双极晶体管(IGBTs)

    模拟和逻辑IC

    汽车应用认证产品(AEC-Q100/Q101)

    74LVC3GU04GM

    Triple unbuffered inverter

    The 74LVC3GU04 is a triple unbuffered inverter.

    Inputs can be driven from either 3.3 V or 5 V devices. These features allow the use of these devices in a mixed 3.3 V and 5 V environment.

    此产品已停产

    Features and benefits

    • Wide supply voltage range from 1.65 V to 5.5 V

    • Overvoltage tolerant inputs to 5.5 V

    • High noise immunity

    • ±24 mA output drive at VCC = 3.0 V

    • CMOS low power consumption

    • Latch-up performance exceeds 250 mA

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and from -40 °C to +125 °C.

    PCB Symbol, Footprint and 3D Model

    Model Name 描述

    封装

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
    74LVC3GU04GM 74LVC3GU04GM,115
    (935277299115)    		 Obsolete no package information
    74LVC3GU04GM,125
    (935277299125)    		 Obsolete

    环境信息

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号 化学成分 RoHS RHF指示符
    74LVC3GU04GM 74LVC3GU04GM,115 74LVC3GU04GM rohs rhf rhf
    74LVC3GU04GM 74LVC3GU04GM,125 74LVC3GU04GM rohs rhf rhf
    品质及可靠性免责声明

    文档 (4)

    文件名称 标题 类型 日期
    74LVC3GU04 Triple unbuffered inverter Data sheet 2023-08-29
    AN10161 PicoGate Logic footprints Application note 2002-10-29
    AN11009 Pin FMEA for LVC family Application note 2019-01-09
    lvc3gu04 74LVC3GU04 IBIS model IBIS model 2015-01-15

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    文件名称 标题 类型 日期
    lvc3gu04 74LVC3GU04 IBIS model IBIS model 2015-01-15

    PCB Symbol, Footprint and 3D Model

    Model Name 描述

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.