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    双极性晶体管

    二极管

    ESD保护、TVS、滤波和信号调节ESD保护

    MOSFET

    氮化镓场效应晶体管(GaN FET)

    绝缘栅双极晶体管(IGBTs)

    模拟和逻辑IC

    汽车应用认证产品(AEC-Q100/Q101)

    74LVC1G99GM

    Ultra-configurable multiple function gate; 3-state

    The 74LVC1G99 provides a low voltage, ultra-configurable, multiple function gate with 3-state output. The device can be configured as one of several logic functions including, AND, OR, NAND, NOR, XOR, XNOR, inverter, buffer and MUX. No external components are required to configure the device as all inputs can be connected directly to VCC or GND. The 3-state output is controlled by the output enable input (OE). A HIGH level at OE causes the output (Y) to assume a high-impedance OFF-state. When OE is LOW, the output state is determined by the signals applied to the Schmitt trigger inputs (A, B, C and D).

    Due to the use of Schmitt trigger inputs the device is tolerant of slowly changing input signals, transforming them into sharply defined, jitter free output signals. By eliminating leakage current paths to VCC and GND, the inputs and disabled output are also over-voltage tolerant, making the device suitable for mixed-voltage applications.

    This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing the damaging backflow current through the device when it is powered down.

    The 74LVC1G99 is fully specified over the supply range from 1.65 V to 5.5 V.

    此产品已停产

    Features and benefits

    • Wide supply voltage range from 1.65 V to 5.5 V

    • 5 V tolerant inputs for interfacing with 5 V logic

    • High noise immunity

    • ±24 mA output drive (VCC = 3.0 V)

    • CMOS low power consumption

    • Latch-up performance exceeds 250 mA

    • Direct interface with TTL levels

    • Inputs accept voltages up to 5 V

    • Complies with JEDEC standard:

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8-B/JESD36 (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C.

    参数类型

    型号 Package name
    74LVC1G99GM XQFN8

    封装

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
    74LVC1G99GM 74LVC1G99GM,125
    (935284438125)    		 Obsolete V99 SOT902-2
    XQFN8
    (SOT902-2)     		SOT902-2 SOT902-2_125

    环境信息

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号 化学成分 RoHS RHF指示符
    74LVC1G99GM 74LVC1G99GM,125 74LVC1G99GM rohs rhf rhf
    品质及可靠性免责声明

    文档 (8)

    文件名称 标题 类型 日期
    74LVC1G99 Ultra-configurable multiple function gate; 3-state Data sheet 2024-08-12
    AN10161 PicoGate Logic footprints Application note 2002-10-29
    AN11009 Pin FMEA for LVC family Application note 2019-01-09
    Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
    lvc1g99 74LVC1G99 IBIS model IBIS model 2014-10-20
    Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
    XQFN8_SOT902-2_mk plastic, extremely thin quad flat package; 8 terminals; 0.55 mm pitch; 1.6 mm x 1.6 mm x 0.5 mm body Marcom graphics 2017-01-28
    SOT902-2 plastic, leadless extremely thin quad flat package; 8 terminals; 0.5 mm pitch; 1.6 mm x 1.6 mm x 0.5 mm body Package information 2020-04-21

    支持

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    模型

    文件名称 标题 类型 日期
    lvc1g99 74LVC1G99 IBIS model IBIS model 2014-10-20

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.