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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

74HCT165DB

8-bit parallel-in/serial out shift register

The 74HC165; 74HCT165 are 8-bit serial or parallel-in/serial-out shift registers. The device features a serial data input (DS), eight parallel data inputs (D0 to D7) and two complementary serial outputs (Q7 and Q7). When the parallel load input (PL) is LOW the data from D0 to D7 is loaded into the shift register asynchronously. When PL is HIGH data enters the register serially at DS. When the clock enable input (CE) is LOW data is shifted on the LOW-to-HIGH transitions of the CP input. A HIGH on CE will disable the CP input. Inputs are overvoltage tolerant to 15 V. This enables the device to be used in HIGH-to-LOW level shifting applications.

此产品已停产

Features and benefits

  • Wide supply voltage range from 2.0 to 6.0 V

  • CMOS low power dissipation

  • High noise immunity

  • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

  • Asynchronous 8-bit parallel load

  • Synchronous serial input

  • Input levels:

    • For 74HC165: CMOS level

    • For 74HCT165: TTL level

  • Complies with JEDEC standards:

    • JESD8C (2.7 V to 3.6 V)

    • JESD7A (2.0 V to 6.0 V)

  • ESD protection:

    • HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V

    • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

  • Multiple package options

  • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

Applications

  • Parallel-to-serial data conversion

PCB Symbol, Footprint and 3D Model

Model Name 描述

封装

下表中的所有产品型号均已停产 。

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
74HCT165DB 74HCT165DB,112
(935190350112)		 Obsolete no package information
74HCT165DB,118
(935190350118)		 Obsolete

环境信息

下表中的所有产品型号均已停产 。

型号 可订购的器件编号 化学成分 RoHS RHF指示符
74HCT165DB 74HCT165DB,112 74HCT165DB rohs rhf rhf
74HCT165DB 74HCT165DB,118 74HCT165DB rohs rhf rhf
品质及可靠性免责声明

文档 (4)

文件名称 标题 类型 日期
74HC_HCT165 8-bit parallel-in/serial out shift register Data sheet 2024-05-30
AN11044 Pin FMEA 74HC/74HCT family Application note 2019-01-09
hct165 74HCT165 IBIS model IBIS model 2015-09-14
HCT_USER_GUIDE HC/T User Guide User manual 1997-10-31

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
hct165 74HCT165 IBIS model IBIS model 2015-09-14

PCB Symbol, Footprint and 3D Model

Model Name 描述

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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