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    双极性晶体管

    二极管

    ESD保护、TVS、滤波和信号调节ESD保护

    MOSFET

    氮化镓场效应晶体管(GaN FET)

    绝缘栅双极晶体管(IGBTs)

    模拟和逻辑IC

    汽车应用认证产品(AEC-Q100/Q101)

    74AUP3G3404GF

    Low-power dual buffer and single inverter

    The 74AUP3G3404 is a dual buffer and single inverter.

    Schmitt trigger action at all inputs makes the circuit tolerant of slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

    This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

    This device is fully specified for partial Power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

    此产品已停产

    Features and benefits

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78B Class II

    • Inputs accept voltages up to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8-B (2.7 V to 3.6 V)

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    封装

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
    74AUP3G3404GF 74AUP3G3404GFX
    (935299448115)    		 Obsolete no package information

    环境信息

    下表中的所有产品型号均已停产 。

    型号 可订购的器件编号 化学成分 RoHS RHF指示符
    74AUP3G3404GF 74AUP3G3404GFX 74AUP3G3404GF rohs rhf rhf
    品质及可靠性免责声明

    文档 (4)

    文件名称 标题 类型 日期
    74AUP3G3404 Low-power dual buffer and single inverter Data sheet 2024-04-29
    aup3g3404 IBIS model IBIS model 2014-06-04
    Nexperia_document_Logic_CombinationLogic_infocard_201710 Combination logic solutions card Leaflet 2019-08-09
    Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    文件名称 标题 类型 日期
    aup3g3404 IBIS model IBIS model 2014-06-04

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.