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    双极性晶体管

    二极管

    ESD保护、TVS、滤波和信号调节ESD保护

    MOSFET

    氮化镓场效应晶体管(GaN FET)

    绝缘栅双极晶体管(IGBTs)

    模拟和逻辑IC

    汽车应用认证产品(AEC-Q100/Q101)

    74AUP1G97UK

    Low-power configurable multiple function gate

    The 74AUP1G97 is a configurable multiple function gate with Schmitt-trigger inputs. The device can be configured as any of the following logic functions MUX, AND, OR, NAND, NOR, inverter and buffer; using the 3-bit input. All inputs can be connected directly to VCC or GND. This device ensures very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V. This device is fully specified for partial power down applications using IOFF. The IOFF circuitry disables the output, preventing the potentially damaging backflow current through the device when it is powered down.

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    Features and benefits

    • Wide supply voltage range from 0.8 V to 3.6 V

    • CMOS low power dissipation

    • High noise immunity

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.65 V to 1.95 V)

      • JESD8-5 (2.3 V to 2.7 V)

      • JESD8C (2.7 V to 3.6 V)

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD 78 Class II Level B

    • Overvoltage tolerant inputs to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial Power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    • Multiple package options

    • Specified from -40 °C to +85 °C and -40 °C to +125 °C

    参数类型

    型号 Package name
    74AUP1G97UK WLCSP6

    文档 (4)

    文件名称 标题 类型 日期
    Nexperia_document_guide_MiniLogic_MicroPak_201808 MicroPak leadless logic portfolio guide Brochure 2018-09-03
    aup1g97 aup1g97 IBIS model IBIS model 2015-09-06
    Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 Leaflet 2019-04-12
    Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    文件名称 标题 类型 日期
    aup1g97 aup1g97 IBIS model IBIS model 2015-09-06

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.