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双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

RET 500 mA 单/双

RET晶体管可降低处理和开发成本，同时最大程度缩小空间

Nexperia面向标准小信号数字应用提供丰富的单双RET产品组合。

主要特性和优势

  • 一个晶体管和两个电阻集成在一个封装中
  • 降低处理和库存成本
  • 广泛的100 mA产品范围
  • 减少电路板空间
  • 500 mA产品组合
  • 缩短装配时间
  • 采用SOT363/457封装的完整双RET系列
  • 简化设计流程
  • 符合AEC-Q101标准
  • 减少焊点，提升系统可靠性

关键应用

  • 数字应用
  • 仪表盘
  • 发动机控制单元

参数搜索

Resistor-Equipped Transistors (RETs)
数据加载中，请稍候...
参数搜索不可用。

产品

型号 描述 状态 快速访问
PDTB1xxxU series 500 mA, 50 V PNP resistor-equipped transistors ACT
PDTB113EU 50 V, 500 mA PNP resistor-equipped transistor Production
PDTB123EU 50 V, 500 mA PNP resistor-equipped transistor Production
PDTB123YU 50 V, 500 mA PNP resistor-equipped transistor Production
PDTB143EU 50 V, 500 mA PNP resistor-equipped transistor Production
PDTB143XU 50 V, 500 mA PNP resistor-equipped transistor Production
PDTD1xxxT series 500 mA, 50 V NPN resistor-equipped transistors ACT
PDTD114ET 50 V, 500 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PDTD143ET-Q 500 mA, 50 V NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PDTD143XT 50 V, 500 mA NPN resistor-equipped transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PDTD1xxxU series 500 mA, 50 V NPN resistor-equipped transistors ACT
PDTD113EU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD113ZU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD114EU-Q 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD123EU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD123YU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD143EU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTD143XU 50 V, 500 mA NPN resistor-equipped transistor Production
PDTB113EQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB113ZQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB114EQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB114ET 500 mA, 50 V PNP resistor-equipped transistors Production
PDTB114EU-Q 50 V, 500 mA PNP resistor-equipped transistor Production
PDTB123EQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB123YQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB143EQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB143ET 500 mA, 50 V PNP resistor-equipped transistors Production
PDTB143XQA 50 V, 500 mA PNP resistor-equipped transistors Production
PDTB143XT 500 mA, 50 V PNP resistor-equipped transistors Production
PDTD113ZT-Q NPN 500 mA, 50 V resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PDTD123ET NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 2.2 kOhm Production
PDTD123TT NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Production
PDTD123YT-Q 50 V, 500 mA NPN resistor-equipped transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMC31-Q 500 mA, 50 V NPN/PNP double resistor-equipped transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PIMC31PAS-Q 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PIMC32-Q 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMC32PAS-Q 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMN31 500 mA, 50 V NPN/NPN double resistor-equipped transistor; R1 = 1 kOhm, R2 = 10 kOhm Production
PIMN31PAS-Q 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PIMN32-Q 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMN32PAS-Q 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMP31-Q 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 1 kΩ, R2 = 10 kΩ Production
PIMP31PAS-Q 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ Production
PIMP32-Q 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor (RET); R1 = 2.2 kΩ, R2 = 10 kΩ Production
PIMP32PAS-Q 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ Production
Visit our documentation center for all documentation

Marcom graphics (1)
文件名称 标题 类型 日期
SOT23_mk plastic, surface-mounted package; 3 terminals; 1.9 mm pitch; 2.9 mm x 1.3 mm x 1 mm body Marcom graphics 2017-01-28

Selection guide (1)
文件名称 标题 类型 日期
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

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