NG体育娱乐，ng体育平台

双极性晶体管

二极管

ESD保护、TVS、滤波和信号调节ESD保护

MOSFET

氮化镓场效应晶体管(GaN FET)

绝缘栅双极晶体管(IGBTs)

模拟和逻辑IC

汽车应用认证产品(AEC-Q100/Q101)

RETs 100 mA双

RET晶体管可降低处理和开发成本，同时最大程度缩小空间

Nexperia面向标准小信号数字应用提供丰富的单双RET产品组合。

主要特性和优势

  • 一个晶体管和两个电阻集成在一个封装中
  • 降低处理和库存成本
  • 广泛的100 mA产品范围
  • 减少电路板空间
  • 500 mA产品组合
  • 缩短装配时间
  • 采用SOT363/457封装的完整双RET系列
  • 简化设计流程
  • 符合AEC-Q101标准
  • 减少焊点，提升系统可靠性

关键应用

  • 数字应用
  • 仪表盘
  • 发动机控制单元

参数搜索

Resistor-Equipped Transistors (RETs)
数据加载中，请稍候...
参数搜索不可用。

产品

型号 描述 状态 快速访问
PEMB10; PUMB10 (Automotive) PNP/PNP resistor-equipped transistors; R1 = 2.2 kOhm, R2 = 47 kOhm (Based on PIP PEMB10_PUMB10) ACT
PUMB10 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PEMB16; PUMB16 PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm ACT
PUMB16 PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = 47 kOhm Production
PEMB19; PUMB19 PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open ACT
PUMB19 PNP/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open Production
PEMD17; PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm ACT
PUMD17 NPN/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm Production
PEMH7; PUMH7 NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open ACT
PUMH7 NPN/NPN resistor-equipped transistors; R1 = 4.7 kOhm, R2 = open Production
NHUMB1 80 V, 100 mA PNP/PNP resistor-equipped double transistors Qualification
NHUMB10 80 V, 100 mA PNP/PNP resistor-equipped double transistors Production
NHUMB11 80 V, 100 mA PNP/PNP resistor-equipped double transistors Production
NHUMB13 80 V, 100 mA PNP/PNP resistor-equipped double transistors Production
NHUMB2 80 V, 100 mA PNP/PNP resistor-equipped double transistors Production
NHUMB9 80 V, 100 mA PNP/PNP resistor-equipped double transistors Production
NHUMD10 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMD12 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMD13 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMD2 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMD3 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMD9 80 V, 100 mA NPN/PNP resistor-equipped double transistors Production
NHUMH1 80 V, 100 mA NPN/NPN resistor-equipped double transistors Production
NHUMH10 80 V, 100 mA NPN/NPN resistor-equipped double transistor Production
NHUMH11 80 V, 100 mA NPN/NPN resistor-equipped double transistors Production
NHUMH13 80 V, 100 mA NPN/NPN resistor-equipped double transistor Production
NHUMH2 80 V, 100 mA NPN/NPN resistor-equipped double transistors Production
NHUMH9 80 V, 100 mA NPN/NPN resistor-equipped double transistor Production
PDTC114ET-Q 50 V, 100 mA NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PIMD2 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PQMB11 PNP/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PQMD10 NPN/PNP resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PQMD12 NPN/PNP resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Production
PQMD13 NPN/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PQMD16 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 47 kΩ Production
PQMD2 NPN/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Production
PQMD3 NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PQMH10 NPN/NPN resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PQMH11 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PQMH13-Q NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PQMH2 NPN/NPN resistor-equipped transistors; R1 = 47 kΩ, R2 = 47 kΩ Production
PQMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kΩ, R2 = 47 kΩ Production
PRMB11 50 V, 100 mA PNP/PNP Resistor-Equipped double Transistors (RET) Production
PRMD10 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) Production
PRMD12 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) Production
PRMD13 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) Production
PRMD2 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) Production
PRMD3 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistors (RET) Production
PRMH10 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Production
PRMH11 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Production
PRMH13 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Production
PRMH2 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Production
PRMH9 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistors (RET) Production
PUMB1 PNP/PNP resistor-equipped transistors; R1 = 22 kΩ, R2 = 22 kΩ Production
PUMB11-Q 50 V, 100 mA PNP/PNP resistor-equipped double transistors; R1 = 10 kΩ, R2 = 10 kΩ Production
PUMB13-Q PNP/PNP resistor-equipped double transistors; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PUMB14 PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = open Production
PUMB15 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PUMB17 PNP/PNP resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm Production
PUMB18 PNP/PNP resistor-equipped transistors; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PUMB2-Q 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PUMB20 50 V, 100 mA PNP/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PUMB24 50 V, 20 mA PNP/PNP resistor-equipped transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PUMB3 50 V, 100 mA PNP/PNP resistor-equipped transistor; R1 = 4.7 kΩ, R2 = open Production
PUMB30 PNP/PNP double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Production
PUMB3H-Q 50 V, 100 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open Production
PUMB4 PNP/PNP resistor-equipped transistors; R1 = 10 kOhm, R2 = open Production
PUMB9 PNP/PNP double Resistor-Equipped Transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PUMD10-Q NPN/PNP double Resistor-Equipped Transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PUMD12-Q NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PUMD13-Q NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 47 kΩ Production
PUMD14 50 V, 100 mA NPN/PNP resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PUMD15-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PUMD16-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PUMD18 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PUMD19 NPN/PNP resistor-equipped transistors; R1 = 22 kOhm, R2 = open Production
PUMD2-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PUMD20 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PUMD24-Q 50 V, 20 mA NPN/PNP resistor-equipped double transistor; R1 = 100 kΩ, R2 = 100 kΩ Production
PUMD3-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PUMD30 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = open Production
PUMD4-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = open Production
PUMD48-Q NPN/PNP resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ and R1 = 2.2 kΩ, R2 = 47 kΩ Production
PUMD6-Q 50 V, 100 mA NPN/PNP Resistor-Equipped Transistor; R1 = 4.7 kΩ, R2 = open Production
PUMD6H-Q 50 V, 100 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open Production
PUMD9-Q 50 V, 100 mA NPN/PNP resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
PUMH1-Q NPN/NPN resistor-equipped double transistor; R1 = 22 kΩ, R2 = 22 kΩ Production
PUMH10-Q NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 47 kΩ Production
PUMH11-Q 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 10 kΩ Production
PUMH13-Q NPN/NPN double Resistor-Equipped Transistor (RET); R1= 4.7 kΩ, R2 = 47 kΩ Production
PUMH14-Q 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 47 kΩ, R2 = open Production
PUMH15-Q NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 4.7 kΩ Production
PUMH16 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = 47 kΩ Production
PUMH17 NPN/NPN resistor-equipped transistors; R1 = 47 kOhm, R2 = 22 kOhm Production
PUMH18 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 4.7 kΩ, R2 = 10 kΩ Production
PUMH19 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 22 kΩ, R2 = open Production
PUMH2-Q 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 47 kΩ, R2 = 47 kΩ Production
PUMH20 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 2.2 kΩ, R2 = 2.2 kΩ Production
PUMH24 NPN/NPN resistor-equipped transistors; R1 = 100 kOhm, R2 = 100 kOhm Production
PUMH30 NPN/NPN double resistor-equipped transistors; R1 = 2.2 kOhm, R2 = open Production
PUMH4 50 V, 100 mA NPN/NPN resistor-equipped transistor; R1 = 10 kΩ, R2 = open Production
PUMH7H-Q 50 V, 100 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 4.7 kΩ, R2 = open Production
PUMH9-Q 50 V, 100 mA NPN/NPN resistor-equipped double transistor; R1 = 10 kΩ, R2 = 47 kΩ Production
Visit our documentation center for all documentation

Marcom graphics (1)
文件名称 标题 类型 日期
SOT457_mk plastic, surface-mounted package (SC-74) Marcom graphics 2018-11-26

Selection guide (1)
文件名称 标题 类型 日期
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10

如果您有支持方面的疑问，请告知我们。如需获得设计支持，请告知我们并填写应答表，我们会尽快回复您。

或NG体育娱乐，ng体育平台获得进一步支持。


交叉参考
NG体育娱乐，ng体育平台