Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra-high performance, low loss, high efficiency power conversion applications. The Merged PiN Schottky (MPS) diode delivered as bare die in Tape and Reel (T & R) offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF) and improves the robustness expressed in a high IFSM.
外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| PSC1065B1-Q_POV | PSC1065B1-Q | Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size | 2024-04-23 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSC1065B1-Q_POV | Bare die product; 1.45 mm × 1.45 mm × 0.11 mm die size | Package information | 2024-06-19 |
采用此封装的产品
Diodes
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PSC1065B1-Q | 650 V, 10 A SiC Schottky diode in bare die for automotive applications |