可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| PSC1065H | PSC1065HJ | 934662645118 | SOT8017 | 订单产品 |
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Click here for more informationPSC1065H
650 V, 10 A SiC Schottky diode in DPAK R2P
Nexperia introduces leading edge Silicon Carbide (SiC) Schottky diode for ultra high performance, low loss, high efficiency power conversion applications. The SiC Schottky diode encapsulated in a Real-2-Pin R2P (TO-252-2) Surface-Mounted Device (SMD) power plastic package offers temperature independent capacitive turn-off, zero recovery switching behavior combined with an outstanding figure-of-merit (QC x VF). The Merged PiN Schottky (MPS) diode improves the robustness expressed in a high IFSM.
Features and benefits
Zero forward and reverse recovery
Temperature independent fast and smooth switching performance
Outstanding figure-of-merit (Qc x VF)
High IFSM capability
High power density
Reduced system cost
System miniaturization
Reduced EMI
Applications
Switch Mode Power Supply (SMPS)
AC-DC and DC-DC converter
Battery charging infrastructure
Server and telecom power supply
Uninterruptible Power Supply (UPS)
Photovoltaic inverters
参数类型
| 型号 | Package version | Package name | Size (mm) | VRRM [max] (V) | VF [max] @25 C (V) | @IF [max] @140 C (A) | IR [max] @25 C (µA) | @VR (V) | IFSM [max] (A) | Nr of functions | Configuration | Ptot [max] (W) | Automotive qualified |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| PSC1065H | SOT8017 | DPAK R2P | 6.16 x 6.54 x 2.29 | 650 | 1.8 | 10 | 60 | 650 | 440 | single | single | 58 | N |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| PSC1065H | PSC1065HJ (934662645118) |
Active | PSC1065H |
DPAK R2P (SOT8017) |
SOT8017 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
Not available |
文档 (7)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| PSC1065H | 650 V, 10 A SiC Schottky diode in DPAK R2P | Data sheet | 2024-02-08 |
| SOT8017 | 3D model for products with SOT8017 package | Design support | 2023-03-13 |
| Nexperia_document_SiC-factsheet | SiC Schottky Diodes - New Silicon Carbide Diode portfolio for high-power | Leaflet | 2021-11-05 |
| SOT8017 | Plastic, single-ended surface-mounted package (DPAK R2P); Real-2-Pin configuration; 4.58 mm pitch; 6.16 mm x 6.54 mm x 2.29 mm body | Package information | 2024-01-30 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| PSC1065H | PSC1065H SPICE model | SPICE model | 2024-05-27 |
| WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| PSC1065H | PSC1065HJ | 934662645118 | Active | SOT8017_118 | 2,500 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
PSC1065H
650 V, 10 A SiC Schottky diode in DPAK R2P
从安世半导体购买
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