可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH | 935690972125 | SOT1202 | 订单产品 |
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Click here for more informationLow-ohmic single-pole double-throw analog switch
The XS3A1T5157 is a low-ohmic single-pole double-throw analog switch suitable for use as an analog or digital 2:1 multiplexer/demultiplexer. It has a digital select input (S), two independent inputs/outputs (Y1 and Y2) and a common input/output (Z).
Schmitt trigger action at the digital input makes the circuit tolerant to slower input rise and fall times. Low threshold digital input allows this device to be driven by 1.8 V logic levels in 3.3 V applications without significant increase in supply current ICC. This makes it possible for the XS3A1T5157 to switch 4.3 V signals with a 1.8 V digital controller, eliminating the need for logic level translation. The XS3A1T5157 allows signals with amplitude up to VCC to be transmitted from Z to Y1 or Y2, or from Y1 or Y2 to Z. Its low ON resistance (0.5 Ω) and flatness (0.13 Ω) ensures minimal attenuation and distortion of transmitted signals.
Wide supply voltage range from 1.4 V to 4.3 V
Very low ON resistance (peak):
1.6 Ω (typical) at VCC = 1.4 V
1.0 Ω (typical) at VCC = 1.65 V
0.55 Ω (typical) at VCC = 2.3 V
0.50 Ω (typical) at VCC = 2.7 V
0.50 Ω (typical) at VCC = 4.3 V
Break-before-make switching
High noise immunity
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 exceeds 8000 V
CDM ANSI/ESDA/JEDEC JS-002 exceeds 1000 V
IEC61000-4-2 contact discharge exceeds 8000 V for switch ports
CMOS low-power consumption
Latch-up performance exceeds 100 mA per JESD78 Class II Level A
Low-switching threshold levels
Control input accepts voltages above supply voltage
Very low supply current, even when input is below VCC
High current handling capability (350 mA continuous current under 3.3 V supply)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
mobiles phones
Tablet / Notebook
Wearables
型号 | Product status | Configuration | VCC (V) | Logic switching levels | RON (Ω) | RON(FLAT) (Ω) | f(-3dB) (MHz) | THD (%) | Xtalk (dB) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
XS3A1T5157GS | Production | SPDT-Z | 1.4 - 4.3 | CMOS/LVTTL | 0.5 | 0.2 | 40 | 0.03 | -90 | ultra low | -40~125 | 247 | 193 | XSON6 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH (935690972125) |
Active | aS |
XSON6 (SOT1202) |
SOT1202 |
REFLOW_BG-BD-1
|
Not available |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
XS3A1T5157 | Low-ohmic single-pole double-throw analog switch | Data sheet | 2020-03-17 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
xs3a1t5157 | XS3A1T5157 IBIS model | IBIS model | 2020-09-11 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1202 | plastic, leadless extremely thin small outline package; 6 terminals; 0.35 mm pitch; 1 mm x 1mm x 0.35 mm body | Package information | 2022-06-01 |
XS3A1T5157GS_Nexperia_Product_Reliability | XS3A1T5157GS Nexperia Product Reliability | Quality document | 2023-05-29 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1202 | MAR_SOT1202 Topmark | Top marking | 2013-06-03 |
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
xs3a1t5157 | XS3A1T5157 IBIS model | IBIS model | 2020-09-11 |
SOT1202 | 3D model for products with SOT1202 package | Design support | 2023-02-02 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
XS3A1T5157GS | XS3A1T5157GSH | 935690972125 | Active | SOT1202_125 | 5,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.