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TO-247 GaN FETs

TO-247 GaN FETs

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TO-247 GaN FETs
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Products

GaN FETs

型号 描述 状态 快速访问
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Production
GAN063-650WSA 650 V, 50 mΩ Gallium Nitride (GaN) FET Production

Documentation

文件名称 标题 类型 日期
TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19
AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
Nexperia_document_book_MOSFETGaNFETApplicationHandbook_2020 MOSFET & GaN FET Application Handbook User manual 2020-11-05
nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
Nexperia_Selection_guide_2023 Nexperia Selection Guide 2023 Selection guide 2023-05-10
nexperia_document_leaflet_GaNFETs_2023 Power GaN FETs leaflet Leaflet 2023-10-25
nexperia_document_leaflet_GaNFETs_2023_CHN Power GaN FETs leaflet Leaflet 2023-10-25

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Datasheets (2)

文件名称 标题 类型 日期
GAN041-650WSB 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package Data sheet 2021-01-12
GAN063-650WSA 650 V, 50 mOhm Gallium Nitride (GaN) FET Data sheet 2020-07-31
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