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    GAN063-650WSA

    650 V, 50 mΩ Gallium Nitride (GaN) FET

    The GAN063-650WSA is a 650 V, 50 mΩ Gallium Nitride (GaN) FET. It is a normally-off device that combines Nexperia’s state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies — offering superior reliability and performance.

    Not recommended for new designs (NRND).

    Features and benefits

    • Ultra-low reverse recovery charge

    • Simple gate drive (0 V to +10 V or 12 V)

    • Robust gate oxide (±20 V capability)

    • High gate threshold voltage (+4 V) for very good gate bounce immunity

    • Very low source-drain voltage in reverse conduction mode

    • Transient over-voltage capability (800 V)

    Applications

    • Hard and soft switching converters for industrial and datacom power

    • Bridgeless totempole PFC

    • PV and UPS inverters

    • Servo motor drives

    参数类型

    型号 Package version Package name Product status Configuration Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
    GAN063-650WSA SOT429 TO-247-3 Production cascode N 1 650 60 175 34.5 4 14.999999 143 125 3.9 N 999.99994 130 2019-11-17

    封装

    型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
    GAN063-650WSA GAN063-650WSAQ
    (934660022127)    		 Active GAN063 650WSA SOT429
    TO-247-3
    (SOT429)     		SOT429 SOT429_127

    环境信息

    型号 可订购的器件编号 化学成分 RoHS RHF指示符
    GAN063-650WSA GAN063-650WSAQ GAN063-650WSA rohs rhf
    品质及可靠性免责声明

    文档 (23)

    文件名称 标题 类型 日期
    GAN063-650WSA 650 V, 50 mOhm Gallium Nitride (GaN) FET Data sheet 2020-07-31
    AN90004 Probing considerations for fast switching applications Application note 2019-11-15
    AN90005 Understanding Power GaN FET data sheet parameters Application note 2020-06-08
    AN90006 Circuit design and PCB layout recommendations for GaN FET half bridges Application note 2019-11-15
    AN90021 Power GaN technology: the need for efficient power conversion Application note 2020-08-14
    AN90030 Paralleling of Nexperia cascode GaN FETs in half-bridge topology Application note 2023-03-22
    AN90030_translated ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 Application note 2023-04-03
    SOT429 3D model for products with SOT429 package Design support 2023-03-13
    nexperia_document_leaflet_GaN_FETs_2023 Power GaN FETs leaflet Leaflet 2025-01-10
    TO-247_SOT429_mk plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Marcom graphics 2019-02-19
    SOT429 plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body Package information 2020-04-21
    SOT429_127 TO-247; Tube pack; Standard product orientation Packing information 2020-04-21
    GAN063-650WSA GAN063-650WSA SPICE model SPICE model 2019-02-18
    TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12
    TN90004 An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability Technical note 2020-07-21
    GAN063-650WSA_RC_thermal_Model GAN063-650WSA RC thermal Model Thermal design 2019-02-18
    GAN063-650WSA_Cauer GAN063-650WSA Cauer thermal model Thermal model 2021-04-07
    GaN063-650WSA GaN041-650WSA Foster thermal model Thermal model 2021-04-02
    nexperia_whitepaper_gan_need_for_efficient_conversion White paper: Power GaN technology: the need for efficient power conversion White paper 2020-07-23
    nexperia_whitepaper_gan_need_for_efficient_conversion_CHN 白皮书: 功率GaN技术： 高效功率转换的需求 White paper 2020-08-17
    nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese Whitepaper: GaN need for efficient conversion (Japanese) White paper 2021-05-20
    nexperia_whitepaper_gan_robustness_aecq101 White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification White paper 2020-06-08
    nexperia_whitepaper_gan_robustness_aecq101_CN Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) White paper 2020-07-15

    支持

    如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

    模型

    文件名称 标题 类型 日期
    GAN063-650WSA GAN063-650WSA SPICE model SPICE model 2019-02-18
    GAN063-650WSA_RC_thermal_Model GAN063-650WSA RC thermal Model Thermal design 2019-02-18
    GAN063-650WSA_Cauer GAN063-650WSA Cauer thermal model Thermal model 2021-04-07
    GaN063-650WSA GaN041-650WSA Foster thermal model Thermal model 2021-04-02
    SOT429 3D model for products with SOT429 package Design support 2023-03-13

    订购、定价与供货

    型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
    GAN063-650WSA GAN063-650WSAQ 934660022127 Active SOT429_127 300 订单产品

    样品

    作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

    如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

    How does it work?

    The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

    可订购部件

    型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
    GAN063-650WSA GAN063-650WSAQ 934660022127 SOT429 订单产品
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