可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | SOT429-3 | 订单产品 |
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Click here for more informationGAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
The GAN041-650WSB is a 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package. It is a normally-off device that combines Nexperia’s latest high-voltage GaN HEMT H2 technology and low-voltage silicon MOSFET technologies — offering superior reliability and performance.
Features and benefits
Ultra-low reverse recovery charge
Simple gate drive (0 V to +10 V or 12 V)
Robust gate oxide (±20 V capability)
High gate threshold voltage (+4 V) for very good gate bounce immunity
Very low source-drain voltage in reverse conduction mode
Transient over-voltage capability
Applications
Hard and soft switching converters for industrial and datacom power
Bridgeless totempole PFC
PV and UPS inverters
Servo motor drives
参数类型
| 型号 | Package version | Package name | Product status | Configuration | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GAN041-650WSB | SOT429-3 | TO-247-3L | Production | cascode | N | 1 | 650 | 41 | 175 | 47.2 | 6.6 | 22 | 187 | 150 | 3.9 | N | 1500 | 147 | 2020-05-14 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ (934661752127) |
Active | GAN041 650WSB |
TO-247-3L (SOT429-3) |
SOT429-3 | Not available |
Series
文档 (21)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN041-650WSB | 650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package | Data sheet | 2021-01-12 |
| AN90004 | Probing considerations for fast switching applications | Application note | 2019-11-15 |
| AN90005 | Understanding Power GaN FET data sheet parameters | Application note | 2020-06-08 |
| AN90006 | Circuit design and PCB layout recommendations for GaN FET half bridges | Application note | 2019-11-15 |
| AN90021 | Power GaN technology: the need for efficient power conversion | Application note | 2020-08-14 |
| AN90030 | Paralleling of Nexperia cascode GaN FETs in half-bridge topology | Application note | 2023-03-22 |
| AN90030_translated | ハーフブリッジ・トポロジーにおけるNexperia製GaN FETの並列 | Application note | 2023-04-03 |
| nexperia_document_leaflet_GaN_FETs_2023 | Power GaN FETs leaflet | Leaflet | 2025-01-10 |
| TO-247_SOT429_mk | plastic, single-ended through-hole package; 3 leads; 5.45 mm pitch; 20.45 mm x 15.6 mm x 4.95 mm body | Marcom graphics | 2019-02-19 |
| SOT429-3 | Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247-3L | Package information | 2023-12-07 |
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| TN90004 | An insight into Nexperia Power GaN technology – Applications, quality, reliability and scalability | Technical note | 2020-07-21 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
| UM90010 | NX-HB-GAN041UL 3.5 kW Half-Bridge evalsuation board using GAN041-650WSB | User manual | 2023-10-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion | White paper: Power GaN technology: the need for efficient power conversion | White paper | 2020-07-23 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_CHN | 白皮书: 功率GaN技术： 高效功率转换的需求 | White paper | 2020-08-17 |
| nexperia_whitepaper_gan_need_for_efficient_conversion_Japanese | Whitepaper: GaN need for efficient conversion (Japanese) | White paper | 2021-05-20 |
| nexperia_whitepaper_gan_robustness_aecq101 | White paper: GaN FET technology and the robustness needed for AEC-Q101 qualification | White paper | 2020-06-08 |
| nexperia_whitepaper_gan_robustness_aecq101_CN | Whitepaper: GaN FET technology and the robustness needed for AEC-Q101 qualification – Chinese (650 V GaN FET技术可提供 出色效率，以及AEC-Q101 认证所需的耐用性) | White paper | 2020-07-15 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GAN041_650WSB | GAN041-650WSB SPICE model | SPICE model | 2021-03-24 |
| GaN041-650WSB | GaN041-650WSB Foster thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_RC_Thermal_Model | GaN041-650WSB RC thermal model | Thermal model | 2021-03-25 |
| GaN041-650WSB_cauer | GaN041-650WSB Cauer thermal model | Thermal model | 2021-03-25 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GAN041-650WSB | GAN041-650WSBQ | 934661752127 | Active | SOT429-3_127 | 300 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GAN041-650WSB
650 V, 35 mΩ Gallium Nitride (GaN) FET in a TO-247 package
从安世半导体购买
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