可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PMXB120EPE | PMXB120EPEZ | 934067154147 | SOT1215 | 订单产品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationTrench MOSFET technology
Leadless ultra small and ultra thin SMD plastic package: 1.1 × 1.0 × 0.37 mm
Exposed drain pad for excellent thermal conduction
ElectroStatic Discharge (ESD) protection 1 kV HBM
Drain-source on-state resistance RDSon = 100 mΩ
High-side load switch and charging switch for portable devices
Power management in battery driven portables
LED driver
DC-to-DC converter
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | VGS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | RDSon [max] @ VGS = 4.5 V (mΩ) | integrated gate-source ESD protection diodes | VESD HBM (V) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | VGSth [typ] (V) | Automotive qualified | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PMXB120EPE | SOT1215 | DFN1010D-3 | Production | P | 1 | -30 | 20 | 120 | 170 | Y | 1000 | 150 | -2.4 | 1.1 | 6.2000003 | 0.4 | -1.5 | N | 309 | 41 | 2013-09-17 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PMXB120EPE | PMXB120EPEZ (934067154147) |
Active | 10 01 00 |
DFN1010D-3 (SOT1215) |
SOT1215 |
REFLOW_BG-BD-1
|
SOT1215_147 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMXB120EPE | 30 V, P-channel Trench MOSFET | Data sheet | 2017-05-04 |
AN10273 | Power MOSFET single-shot and repetitive avalanche ruggedness rating | Application note | 2022-06-20 |
AN10874_ZH | LFPAK MOSFET thermal design guide, Chinese version | Application note | 2020-04-30 |
AN11113_ZH | LFPAK MOSFET thermal design guide - Part 2 | Application note | 2020-04-30 |
AN11261 | RC Thermal Models | Application note | 2021-03-18 |
AN11599 | Using power MOSFETs in parallel | Application note | 2016-07-13 |
SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
nexperia_document_leaflet_SsMOS_for_mobiles_2022-CHN | 适合移动和便携式设备的 大批量小信号MOSFET, 采用WLCSP和无引脚DFN封装 | Leaflet | 2022-07-04 |
nexperia_document_leaflet_SsMOS_for_mobiles_2022 | High volume small-signal MOSFETs for mobiles and portables, in WLCSP and leadless DFN packages | Leaflet | 2022-07-04 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
DFN1010D-3_SOT1215_mk | plastic, thermal enhanced ultra thin small outline package; 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Marcom graphics | 2017-01-28 |
SOT1215 | plastic, leadless thermal enhanced ultra thin small outline package with side-wettable flanks (SWF); 3 terminals; 0.75 mm pitch; 1.1 mm x 1 mm x 0.37 mm body | Package information | 2022-05-27 |
SOT1215_147 | DFN1010D-3; Reel pack, SMD, 7"; Q2/T3 standard product orientation; Orderable part number ending ,147 or Z; Ordering code (12NC) ending 147 | Packing information | 2020-04-21 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
PMXB120EPE_22_10_2013 | PMXB120EPE Spice model | SPICE model | 2013-12-12 |
TN00008 | Power MOSFET frequently asked questions and answers | Technical note | 2023-01-12 |
如果您需要设计/技术支持,请告知我们并填写 应答表 我们会尽快回复您。
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PMXB120EPE_22_10_2013 | PMXB120EPE Spice model | SPICE model | 2013-12-12 |
SOT1215 | 3D model for products with SOT1215 package | Design support | 2019-10-07 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
PMXB120EPE | PMXB120EPEZ | 934067154147 | Active | SOT1215_147 | 5,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.