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PMDPB58UPE

20 V dual P-channel Trench MOSFET

Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage

  • Very fast switching

  • Trench MOSFET technology

  • 2 kV ElectroStatic Discharge (ESD) protection

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) integrated gate-source ESD protection diodes VESD HBM (V) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMDPB58UPE SOT1118 DFN2020-6 Production P 2 -20 8 67 95 Y 2000 150 -4.5 0.90000004 6.3 0.515 -0.7 N 804 95 2012-06-20

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMDPB58UPE PMDPB58UPE,115
(934066845115)		 Active 2A SOT1118
DFN2020-6
(SOT1118) 		SOT1118 REFLOW_BG-BD-1
SOT1118_115

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMDPB58UPE PMDPB58UPE,115 PMDPB58UPE rohs rhf rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
PMDPB58UPE 20 V dual P-channel Trench MOSFET Data sheet 2017-05-09
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11304 MOSFET load switch PCB with thermal measurement Application note 2013-01-28
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN2020-6_SOT1118_mk plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Marcom graphics 2017-01-28
SOT1118 plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body Package information 2022-06-02
SOT1118_115 DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation Packing information 2020-06-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
nexperia_report_aoi_inspection_dfn_201808 Automatic Optical Inspection of DFN Components Report 2018-09-03
PMDPB58UPE_16_05_2012 PMDPB58UPE Spice model SPICE model 2013-12-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMDPB58UPE_16_05_2012 PMDPB58UPE Spice model SPICE model 2013-12-12
SOT1118 3D model for products with SOT1118 package Design support 2019-10-07

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMDPB58UPE PMDPB58UPE,115 934066845115 Active SOT1118_115 3,000 订单产品

样品

安世半导体客户可通过我们的销售机构或直接通过在线样品商店订购样品： https://extranet.nexperia.com.

样品订单通常需要2-4天寄送时间。

如果您尚未取得安世半导体的直接采购帐号，我们的全球与区域经销网络可以协助您取得样品。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMDPB58UPE PMDPB58UPE,115 934066845115 SOT1118 订单产品
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