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PSMN1R3-100ASF

NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package

NextPower 100 V, standard level gate drive MOSFET. Qualified to 175 °C and recommended for high power industrial and consumer applications.

Features and benefits

  • Low Qrr for higher efficiency and lower spiking

  • 400 Amps ID(max) continuous current rating

  • Low QG × RDSon FOM for high efficiency switching applications

  • Strong avalanche energy rating (Eas)

  • Avalanche rated and 100% tested

  • Ha-free and RoHS compliant CCPAK1212 package

Applications

  • Battery protection

  • High power full and half-bridge configurations

  • BLDC motor control

  • OR-ing

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R3-100ASF SOT8000A CCPAK1212 Development N 1 100 1.3 175 400 48 247.99998 1071 85 3 17737 3983.9998 2024-05-06

文档 (1)

文件名称 标题 类型 日期
PSMN1R3-100ASF NextPower 100 V, 1.3 mOhm, N-channel MOSFET in CCPAK1212 package Data sheet 2024-05-13

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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