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PSMN1R0-80CSE

N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package

N-channel enhancement mode MOSFET in a CCPAK1212i package qualified to 175 °C. Part of Nexperia's Application Specific MOSFETs (ASFETs) for Hotswap and Soft Start. The PSMN1R0-80CSE delivers very low RDSon and enhanced safe operating area performance in a high-reliability copper-clip package (CCPAK1212).

PSMN1R0-80CSE complements the latest "hot-swap" controllers - robust enough to withstand substantial inrush currents during turn-on, low RDSon to minimize I²R losses and deliver optimum efficiency when turned fully ON.

Features and benefits

  • Fully optimized Safe Opertating Area (SOA) for superior linear mode operation

  • Low RDSon for low I²R conduction losses

  • CCPAK1212i package for applications that demand the highest performance and reliability

  • Inverted package, suitable for top-side cooling

Applications

  • Hot swap

  • Load switch

  • Soft start

  • E-fuse

  • Telecommunication systems based on a 48 V backplane/supply rail

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) RDSon [max] @ VGS = 10 V (mΩ) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 10 V (nC) Ptot [max] (W) Qr [typ] (nC) VGSth [typ] (V) Ciss [typ] (pF) Coss [typ] (pF) Release date
PSMN1R0-80CSE SOT8005A CCPAK1212i Development N 1 80 0.95 175 400 47 286 1071 113 2.6 21398 6453 2024-05-06

文档 (1)

文件名称 标题 类型 日期
PSMN1R0-80CSE N-channel, 80 V, 0.95 mOhm, MOSFET with enhanced SOA in CCPAK1212i package Data sheet 2024-05-29

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How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

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