可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ | 934667633332 | SOT8091-1 | 订单产品 |
Register once, drag and drop ECAD models into your CAD tool and speed up your design.
Click here for more informationGANE3R9-150QBA
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
The GANE3R9-150QBA is a a general purpose 150 V, 3.9 mΩ Gallium Nitride (GaN) FET in a Very-Thin-Profile Quad Flat No-Lead Package (VQFN) package. It is a normally-off e-mode device offering superior performance and very low on-state resistance.
Features and benefits
Enhancement mode - normally-off power switch
Ultra high frequency switching capability
No body diode
Low gate charge, low output charge
Qualified for standard applications
RoHS, Pb-free, REACH-compliant
High efficiency and high power density
Very-Thin-Profile Quad Flat No-Lead Package (VQFN) 4.0 mm x 6.0 mm
Applications
High power density and high efficiency power conversion
AC-to-DC converters, (secondary stage)
High frequency DC-to-DC converters in 48 V systems
Fast battery charging, mobiles phones, laptop, tablet and USB type-C chargers
Datacom and telecom (AC-to-DC and DC-to-DC) converters
Motor drives
LiDAR (non-automotive)
Class D audio amplifiers
参数类型
| 型号 | Package version | Package name | Product status | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 5 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | Ptot [max] (W) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| GANE3R9-150QBA | SOT8091-1 | VQFN7 | Production | 1 | 150 | 3.9 | 150 | 100 | 3.5 | 65 | 1.1 | 2200 | 900 | 2024-04-22 |
封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ (934667633332) |
Active | 3R9EQBA |
VQFN7 (SOT8091-1) |
SOT8091-1 | SOT8091-1_332 |
文档 (3)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| GANE3R9-150QBA | 150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN) | Data sheet | 2024-04-30 |
| SOT8091-1 | very thin quad flatpack; no leads | Package information | 2024-05-29 |
| SOT8091-1_332 | VQFN7; Reel dry pack for SMD, 13"; Q2/T3 product orientation | Packing information | 2024-03-28 |
支持
如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。
模型
No documents available
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| GANE3R9-150QBA | GANE3R9-150QBAZ | 934667633332 | Active | SOT8091-1_332 | 2,500 | 订单产品 |
样品
作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。
如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。
How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
GANE3R9-150QBA
150 V, 3.9 mOhm Gallium Nitride (GaN) FET in a 4.0 mm x 6.0 mm Very-Thin-Profile Quad Flat No-Lead Package (VQFN)
从安世半导体购买
| SKU | 库存* | MOQ | 单位价格 | 数量 |
|---|
