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    74AUP2G00-Q100

    Low-power dual 2-input NAND gate

    The 74AUP2G00-Q100 provides dual 2-input NAND function.

    Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.

    This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.

    This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.

    This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.

    特性

    • Automotive product qualification in accordance with AEC-Q100 (Grade 1)

      • Specified from -40 °C to +85 °C and from -40 °C to +125 °C

    • Wide supply voltage range from 0.8 V to 3.6 V

    • High noise immunity

    • Complies with JEDEC standards:

      • JESD8-12 (0.8 V to 1.3 V)

      • JESD8-11 (0.9 V to 1.65 V)

      • JESD8-7 (1.2 V to 1.95 V)

      • JESD8-5 (1.8 V to 2.7 V)

      • JESD8-B (2.7 V to 3.6 V)

    • Low static power consumption; ICC = 0.9 μA (maximum)

    • Latch-up performance exceeds 100 mA per JESD78 Class II

    • Inputs accept voltages up to 3.6 V

    • Low noise overshoot and undershoot < 10 % of VCC

    • IOFF circuitry provides partial power-down mode operation

    • ESD protection:

      • HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V

      • CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V

    参数类型

    Type numberProduct statusVCC (V)Logic switching levelsOutput drive capability (mA)tpd (ns)fmax (MHz)Nr of bitsPower dissipation considerationsTamb (°C)Rth(j-a) (K/W)Ψth(j-top) (K/W)Rth(j-c) (K/W)Package name
    74AUP2G00DC-Q100Production0.8 - 3.6CMOS± 1.98.3702ultra low-40~12520334.1113VSSOP8

    封装

    型号封装尺寸版本回流焊/波峰焊包装状态标示可订购的器件编号，（订购码(12NC)）
    74AUP2G00DC-Q100
    VSSOP8
    (SOT765-1)     		SOT765-1SOT765-1_125Activep0074AUP2G00DC-Q100H
    ( 9356 908 61125 )

    环境信息

    型号可订购的器件编号化学成分RoHSRHF指示符无铅转换日期
    74AUP2G00DC-Q10074AUP2G00DC-Q100H74AUP2G00DC-Q100week 25, 2019
    品质及可靠性免责声明

    文档 (6)

    文件名称标题类型日期
    74AUP2G00_Q100Low-power dual 2-input NAND gateData sheet2023-07-14
    AN11052Pin FMEA for AUP familyApplication note2019-01-09
    aup2g00aup2g00 IBIS modelIBIS model2013-04-07
    Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904Leaflet2019-04-12
    Nexperia_Selection_guide_2023Nexperia Selection Guide 2023Selection guide2023-05-10
    SOT765-1plastic, very thin shrink small outline package; 8 leads; 0.5 mm pitch; 2 mm x 2.3 mm x 1 mm bodyPackage information2022-06-03

    支持

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    模型

    文件名称标题类型日期
    aup2g00aup2g00 IBIS modelIBIS model2013-04-07

    订购、定价与供货

    样品

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    样品订单通常需要2-4天寄送时间。

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