可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
PSMNR90-40YSN | PSMNR90-40YSNX | 934664046115 | SOT669 | 订单产品 |
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Click here for more informationN-channel 40 V, 0.97 mOhm, 320 A, standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology.
320 Amp, standard level gate drive N-channel enhancement mode MOSFET in 175 °C LFPAK56 package using advanced TrenchMOS Superjunction technology. This product has been designed and qualified for high performance power switching applications.
320 A continuous ID(max)
Avalanche rated, 100% tested at IAS = 190 A
Low-spiking, allowing for high system efficiency and low EMI designs
NextPower-S3 technology delivers 'superfast switching' with soft body-diode recovery
Low QRR, spiking, ringing, and oscillation for high system efficiency and low EMI designs
Schottky-Plus body-diode with low VSD, and low IDSS leakage
High reliability LFPAK (Power SO8) package, with copper-clip and solder die attach, qualified to 175 °C
Exposed leads can be wave soldered, visual solder joint inspection and high quality solder joints for ultimate reliability
Low parasitic inductance and resistance
型号 | Package version | Package name | Product status | Channel type | Nr of transistors | VDS [max] (V) | RDSon [max] @ VGS = 10 V (mΩ) | Tj [max] (°C) | ID [max] (A) | QGD [typ] (nC) | QG(tot) [typ] @ VGS = 10 V (nC) | Ptot [max] (W) | Qr [typ] (nC) | VGSth [typ] (V) | Ciss [typ] (pF) | Coss [typ] (pF) | Release date |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
PSMNR90-40YSN | SOT669 | LFPAK56; Power-SO8 | Production | N | 1 | 40 | 0.96999997 | 175 | 320 | 42 | 135 | 268 | 24 | 3 | 7587.0005 | 1666 | 2023-04-17 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
PSMNR90-40YSN | PSMNR90-40YSNX (934664046115) |
Active | N9040S |
LFPAK56; Power-SO8 (SOT669) |
SOT669 |
REFLOW_BG-BD-1
WAVE_BG-BD-1 |
SOT669_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
PSMNR90-40YSN | N-channel 40 V, 0.97 mOhm, 320 A, standard level MOSFET in LFPAK56 using NextPower-S3 Schottky-Plus technology. | Data sheet | 2023-12-13 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
LFPAK56_POWER-SO8_SOT669_mk | plastic, single-ended surface-mounted package; 4 terminals; 4.9 mm x 4.45 mm x 1 mm body | Marcom graphics | 2017-01-28 |
SOT669 | plastic, single-ended surface-mounted package; 4 terminals | Package information | 2022-05-30 |
SOT669_115 | LFPAK56; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2022-05-10 |
T15_SOT669_PSMNR90-40YSN_Nexperia_Quality_document | PSMNR90-40YSN Quality document | Quality document | 2024-04-12 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
CauerModel_PSMNR90-40YSN | Cauer model PSMNR90-40YSN | Thermal model | 2024-03-20 |
FosterModel_PSMNR90-40YSN | Foster model PSMNR90-40YSN | Thermal model | 2024-03-20 |
PSMNR90-40YSN | PSMNR90-40YSN FloTherm thermal model | Thermal model | 2024-03-20 |
PSMNR90-40YSN_Cauer | PSMNR90-40YSN Cauer model | Thermal model | 2024-03-20 |
PSMNR90-40YSN_Foster | PSMNR90-40YSN Foster model | Thermal model | 2024-03-20 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
CauerModel_PSMNR90-40YSN | Cauer model PSMNR90-40YSN | Thermal model | 2024-03-20 |
FosterModel_PSMNR90-40YSN | Foster model PSMNR90-40YSN | Thermal model | 2024-03-20 |
PSMNR90-40YSN | PSMNR90-40YSN FloTherm thermal model | Thermal model | 2024-03-20 |
PSMNR90-40YSN_Cauer | PSMNR90-40YSN Cauer model | Thermal model | 2024-03-20 |
PSMNR90-40YSN_Foster | PSMNR90-40YSN Foster model | Thermal model | 2024-03-20 |
SOT669 | 3D model for products with SOT669 package | Design support | 2017-06-30 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
PSMNR90-40YSN | PSMNR90-40YSNX | 934664046115 | Active | SOT669_115 | 1,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.