可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
NXS0506UP | NXS0506UPAZ | 935691201336 | SOT8025-1 | 订单产品 |
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Click here for more informationSD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection
The NXS0506 is an SD 3.0-compatible bidirectional dual supply level translator with auto-direction control. It is designed to interface between a memory card operating at 1.7 V to 3.6 V signal levels and a host with a nominal supply voltage of 1.1 V to 1.95 V. The device supports SD 3.0: SDR104, SDR50, DDR50, SDR25, SDR12 and SD 2.0 High-Speed (50 MHz) and Default-Speed (25 MHz) modes. The device has a built-in EMI filter and robust ESD protection (IEC 61000-4-2, level 4).
Supports up to 208 MHz clock rate
SD 3.0 specification-compatible voltage translation to support: SDR104, SDR50, DDR50, SDR25, SDR12, High-Speed and Default-Speed modes
1.1 V to 1.95 V host side interface voltage support
Auto-direction sensing
Low power consumption
Integrated pull-up resistors: no external resistors required
Integrated EMI filters suppress higher harmonics of digital I/Os
Level shifting buffers keep ESD stress away from the host (zero-clamping concept)
16-bumps WLCSP16 package; pitch 0.35 mm
16-terminal XQFN16 package; pitch 0.4 mm
Latch-up performance exceeds 100 mA per JESD78 Class II.A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2 kV
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1 kV
IEC61000-4-2, level 4, contact discharge on all memory card-side pins exceeds 8 kV
IEC61000-4-2, level 4, air discharge on all memory card-side pins exceeds 15 kV
Specified from -40 °C to +85 °C
Smartphones
mobiles handsets
Digital cameras
Tablet PCs
Laptop computers
SD, MMC or microSD card readers
型号 | Product status | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXS0506UP | Production | 1.1 - 1.95 | 1.7 - 3.6 | CMOS | ± 2 | 2.6 | 6 | low | -40~85 | 75 | 0.14 | - | WLCSP16 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
NXS0506UP | NXS0506UPAZ (935691201336) |
Active | m5 |
WLCSP16 (SOT8025-1) |
SOT8025-1 | SOT8025-1_336 |
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
NXS0506UP | NXS0506UPZ (935691201084) |
Discontinued / End-of-life | m5 |
WLCSP16 (SOT8025-1) |
SOT8025-1 | Not available |
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
NXS0506UP | NXS0506UPAZ | NXS0506UP |
下表中的所有产品型号均已停产 。
型号 | 可订购的器件编号 | 化学成分 | RoHS | RHF指示符 |
---|---|---|---|---|
NXS0506UP | NXS0506UPZ | NXS0506UP |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
NXS0506 | SD 3.0-compatible memory card integrated auto-direction control and level translator with EMI filter and ESD protection | Data sheet | 2024-02-06 |
AN90037 | NXS0506 SD-card voltage level translator | Application note | 2022-09-22 |
SOT8025-1 | 3D model for products with SOT8025-1 package | Design support | 2023-02-07 |
nxs0506 | NXS0506 IBIS model | IBIS model | 2021-12-21 |
SOT8025-1 | wafer level chip-scale package; 16 bumps; 1.455 mm x 1.455 mm x 0.43 mm bod | Package information | 2022-07-08 |
SOT8025-1_336 | WLCSP16; Reel dry pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2023-03-03 |
NXS0506UP_Nexperia_Product_Reliability | NXS0506UP Nexperia Product Reliability | Quality document | 2023-05-29 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
NXS0506UP | NXS0506UPAZ | 935691201336 | Active | SOT8025-1_336 | 3,000 | 订单产品 |
NXS0506UP | NXS0506UPZ | 935691201084 | Discontinued / End-of-life | SOT8025-1_084 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.