外形图
| 封装版本 | 封装名称 | 封装说明 | 参考 | 发行日期 |
|---|---|---|---|---|
| SOT1118 | DFN2020-6 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | 2013-06-06 |
相关文档
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| SOT1118 | 3D model for products with SOT1118 package | Design support | 2019-10-07 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| DFN2020-6_SOT1118_mk | plastic, thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Marcom graphics | 2017-01-28 |
| SOT1118 | plastic, leadless thermal enhanced ultra thin small outline package; no leads; 6 terminals; 0.65 mm pitch; 2 mm x 2 mm x 0.65 mm body | Package information | 2022-06-02 |
| SOT1118_115 | DFN2020-6; Reel pack for SMD, 7''; Q2/T3 product orientation | Packing information | 2020-06-12 |
| SOT1118_184 | DFN2020-6; Reel pack for SMD, 7"; Q1/T1 product orientation | Packing information | 2020-04-21 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
采用此封装的产品
Automotive qualified products (AEC-Q100/Q101)
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PBSS4230PANP | 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor | |
| PMDPB55XPA | 20 V, dual P-channel Trench MOSFET | |
| PBSS4112PANP | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor | |
| PBSS4112PAN | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | |
| PBSS5260PAP | 60 V, 2 A PNP/PNP low V (BISS) transistor | |
| PBSS4260PAN | 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4160PAN | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4160PANP-Q | 60 V, 1 A NPN/PNP low VCEsat transistor | |
| PBSS4130PAN | 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4260PANP | 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor | |
| PBSS5230PAP | 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor | |
| PMCPB5530XA | 20 V, complementary Trench MOSFET | |
| PBSS5160PAP | 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor | |
| PBSS5130PAP-Q | 30 V, 1 A PNP/PNP low VCEsat transistor | |
| PBSS4130PANP | 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor | |
| PMDPB30XNA | 20 V, dual N-channel Trench MOSFET |
Bipolar transistors
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PIMN31PA | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ | |
| PBSS4230PANP | 30 V, 2 A NPN/PNP low VCEsat (BISS) transistor | |
| PBSS4112PANP | 120 V, 1 A NPN/PNP low VCEsat (BISS) transistor | |
| PBSS4112PAN | 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4230PAN | 30 V, 2 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS5112PAP | 120 V, 1 A PNP/PNP low VCEsat (BISS) transistor | |
| PBSS5260PAP | 60 V, 2 A PNP/PNP low V (BISS) transistor | |
| PBSM5240PFH | 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET | |
| PBSS4260PAN | 60 V, 2 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4160PAN | 60 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4160PANP-Q | 60 V, 1 A NPN/PNP low VCEsat transistor | |
| PBSM5240PF | 40 V, 2 A PNP low VCEsat (BISS) transistor with N-channel Trench MOSFET | |
| PBSS4160PANP | 60 V, 1 A NPN/PNP low VCEsat transistor | |
| PBSS5130PAP | 30 V, 1 A PNP/PNP low VCEsat transistor | |
| PBSS4130PAN | 30 V, 1 A NPN/NPN low VCEsat (BISS) transistor | |
| PBSS4260PANP | 60 V, 2 A NPN/PNP low VCEsat (BISS) transistor | |
| PBSS5230PAP | 30 V, 2 A PNP/PNP low VCEsat (BISS) transistor | |
| PIMN32PA | 50 V, 500 mA NPN/NPN Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PBSS5160PAP | 60 V, 1 A PNP/PNP low VCEsat (BISS) transistor | |
| PBSS5130PAP-Q | 30 V, 1 A PNP/PNP low VCEsat transistor | |
| PIMC32PA | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PBSS4130PANP | 30 V, 1 A NPN/PNP low VCEsat (BISS) transistor | |
| PIMP31PA | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ | |
| PIMP32PA | 50 V, 500 mA PNP/PNP Resistor-Equipped double Transistor; R1 = 2.2 kΩ, R2 = 10 kΩ | |
| PIMC31PA | 50 V, 500 mA NPN/PNP Resistor-Equipped double Transistor; R1 = 1 kΩ, R2 = 10 kΩ |
MOSFETs
| 型号 | 描述 | 快速访问 |
|---|---|---|
| PMDPB58UPE | 20 V dual P-channel Trench MOSFET | |
| PMDPB70XPE | 20 V dual P-channel Trench MOSFET | |
| PMDPB55XPA | 20 V, dual P-channel Trench MOSFET | |
| PMDPB85UPE | 20 V dual P-channel Trench MOSFET | |
| PMCPB5530X | 20 V, complementary Trench MOSFET | |
| PMDPB80XP | 20 V, dual P-channel Trench MOSFET | |
| PMDPB70XP | 30 V, dual P-channel Trench MOSFET | |
| PMCPB5530XA | 20 V, complementary Trench MOSFET | |
| PMDPB95XNE2 | 30 V, dual N-channel Trench MOSFET | |
| PMDPB55XP | 20 V, dual P-channel Trench MOSFET | |
| PMDPB30XNA | 20 V, dual N-channel Trench MOSFET | |
| PMDPB30XN | 20 V, dual N-channel Trench MOSFET |