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PMZB350UPE

20 V, single P-channel Trench MOSFET

P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.

Features and benefits

  • Low threshold voltage

  • Very fast switching

  • Trench MOSFET technology

  • 1.8 kV ESD protected

Applications

  • Relay driver

  • High-speed line driver

  • High-side load switch

  • Switching circuits

参数类型

型号 Package version Package name Product status Channel type Nr of transistors VDS [max] (V) VGS [max] (V) RDSon [max] @ VGS = 4.5 V (mΩ) RDSon [max] @ VGS = 2.5 V (mΩ) integrated gate-source ESD protection diodes VESD HBM (V) Tj [max] (°C) ID [max] (A) QGD [typ] (nC) QG(tot) [typ] @ VGS = 4.5 V (nC) Ptot [max] (W) VGSth [typ] (V) Automotive qualified Ciss [typ] (pF) Coss [typ] (pF) Release date
PMZB350UPE SOT883B DFN1006B-3 Production P 1 -20 8 450 645 Y 1800 150 -1.4 0.25 1.3 0.36 -0.7 N 126.99999 34 2012-08-24

封装

型号 可订购的器件编号，（订购码(12NC)） 状态 标示 封装 外形图 回流焊/波峰焊 包装
PMZB350UPE PMZB350UPE,315
(934066841315)		 Active 0100 1100 SOT883B
DFN1006B-3
(SOT883B) 		SOT883B REFLOW_BG-BD-1
SOT883B_315

环境信息

型号 可订购的器件编号 化学成分 RoHS RHF指示符
PMZB350UPE PMZB350UPE,315 PMZB350UPE rohs rhf rhf
品质及可靠性免责声明

文档 (19)

文件名称 标题 类型 日期
PMZB350UPE 20 V, single P-channel Trench MOSFET Data sheet 2017-05-04
AN10273 Power MOSFET single-shot and repetitive avalanche ruggedness rating Application note 2022-06-20
AN10874_ZH LFPAK MOSFET thermal design guide, Chinese version Application note 2020-04-30
AN11113_ZH LFPAK MOSFET thermal design guide - Part 2 Application note 2020-04-30
AN11158 Understanding power MOSFET data sheet parameters Application note 2020-07-06
AN11158_ZH Understanding power MOSFET data sheet parameters Application note 2021-01-04
AN11243 Failure signature of Electrical Overstress on Power MOSFETs Application note 2017-12-21
AN11261 RC Thermal Models Application note 2021-03-18
AN11599 Using power MOSFETs in parallel Application note 2016-07-13
SOT883B 3D model for products with SOT883B package Design support 2020-01-22
nexperia_document_leaflet_SsMOS_for_mobiles_2022-CHN 适合移动和便携式设备的 大批量小信号MOSFET， 采用WLCSP和无引脚DFN封装 Leaflet 2022-07-04
nexperia_document_leaflet_SsMOS_for_mobiles_2022 High volume small-signal MOSFETs for mobiles and portables, in WLCSP and leadless DFN packages Leaflet 2022-07-04
Nexperia_package_poster Nexperia package poster Leaflet 2020-05-15
DFN1006B-3_SOT883B_mk plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1 mm x 0.6 mm x 0.37 mm body Marcom graphics 2017-01-28
SOT883B plastic, leadless ultra small plastic package; 3 solder lands; 0.35 mm pitch; 1.0 mm x 0.6 mm x 0.37 mm body Package information 2022-05-20
SOT883B_315 DFN1006B-3; Reel pack for SMD, 7"; Q3/T4 product orientation Packing information 2020-06-12
REFLOW_BG-BD-1 Reflow soldering profile Reflow soldering 2021-04-06
PMZB350UPE_30_05_2012 PMZB350UPE Spice model SPICE model 2013-12-12
TN00008 Power MOSFET frequently asked questions and answers Technical note 2023-01-12

支持

如果您需要设计/技术支持，请告知我们并填写 应答表 我们会尽快回复您。

模型

文件名称 标题 类型 日期
PMZB350UPE_30_05_2012 PMZB350UPE Spice model SPICE model 2013-12-12
SOT883B 3D model for products with SOT883B package Design support 2020-01-22

订购、定价与供货

型号 Orderable part number Ordering code (12NC) 状态 包装 Packing Quantity 在线购买
PMZB350UPE PMZB350UPE,315 934066841315 Active SOT883B_315 10,000 订单产品

样品

作为 Nexperia 的客户，您可以通过我们的销售机构订购样品。

如果您没有 Nexperia 的直接账户，我们的全球和地区分销商网络可为您提供 Nexperia 样品支持。查看官方经销商列表。

How does it work?

The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.

可订购部件

型号 可订购的器件编号 订购代码(12NC) 封装 从经销商处购买
PMZB350UPE PMZB350UPE,315 934066841315 SOT883B 订单产品
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