可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
NXT4557GU | NXT4557GUX | 935691191115 | SOT1160-1 | 订单产品 |
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Click here for more informationSIM card interface level translator with enable pin
The NXT4557 device is built for interfacing a SIM card with a single low-voltage host side interface. The NXT4557 has three level translators to convert the data, RST and CLK signals between a SIM card and a host microcontroller. A high speed level translation capable of supporting class-B, class-C SIM cards. An active HIGH EN pin enables normal operation of the translator. A HIGH to LOW transition on pin EN initiates a shutdown sequence on SIM card pins in accordance with ISO-7816-3.
The NXT4557 is compliant with all ETSI, IMT-2000 and ISO-7816 SIM/Smart card interface requirements.
Support SIM cards and eSIM with supply voltages 1.62 V to 3.3 V
Host micro-controller operating voltage range: 1.08 V to 1.98 V
Automatic level translation of I/O, RST and CLK between SIM card and host side interface with capacitance isolation
Incorporates shutdown feature for the SIM card signals according to ISO-7816-3
High Vdis(UVLO_AC) switching level, arranging quick shut down when VCC_SIM powers down
Integrated pull-up resistors; no external resistor required
Integrated EMI Filters suppresses higher harmonics of digital I/O's
A HIGH EN signal enables the translation of the signals
Low current shutdown mode < 1 μA
Supports clock speed beyond 5 MHz clock
Pb-free, Restriction of Hazardous Substances (RoHS) compliant and free of halogen and antimony (Dark Green compliant)
ESD protection:
HBM ANSI/ESDA/JEDEC JS-001 exceeds 2 kV
CDM ANSI/ESDA/JEDEC JS-002 exceeds 1 kV
IEC61000-4-2 level 4, contact and air discharge on all SIM card-side pins are 8kV and 15 kV
Available in 10-pin XQFN package
NXT4557 can be used with a range of SIM card attached devices including:
mobiles and personal phoness
Wireless modems
SIM card terminals
型号 | Product status | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXT4557GU | Production | 1.08 - 1.98 | 1.62 - 3.3 | CMOS | ± 1 | 20 | 3 | low | -40~85 | 118 | 5.1 | 144 | XQFN10 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
NXT4557GU | NXT4557GUX (935691191115) |
Active | z7 |
XQFN10 (SOT1160-1) |
SOT1160-1 | SOT1160-1_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
NXT4557 | SIM card interface level translator with enable pin | Data sheet | 2023-05-22 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1160-1 | 3D model for products with SOT1160-1 package | Design support | 2019-10-03 |
nxt4557 | NXT4557 IBIS model | IBIS model | 2021-08-31 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
XQFN10_SOT1160-1_mk | plastic, extremely thin quad flat package; no leads; 10 terminals; 0.4 mm pitch; 1.4 mm x 1.8 mm x 0.5 mm body | Marcom graphics | 2017-01-28 |
SOT1160-1 | plastic, leadless extremely thin quad flat package; 10 terminals; 0.4 mm pitch; 1.4 mm x 1.8 mm x 0.5 mm body | Package information | 2022-06-07 |
SOT1160-1_115 | XQFN10; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2023-08-31 |
NXT4557GU_Nexperia_Product_Reliability | NXT4557GU Nexperia Product Reliability | Quality document | 2023-05-29 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
NXT4557GU | NXT4557GUX | 935691191115 | Active | SOT1160-1_115 | 4,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.