可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
LSF0102DP-Q100 | LSF0102DP-Q100H | 935691058125 | SOT505-2 | 订单产品 |
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Click here for more information2-bit bidirectional multi-voltage level translator; open-drain; push-pull
The LSF0102-Q100 is a 2 channel bidirectional multi-voltage level translator for open-drain and push-pull applications. It supports up to 100 MHz up translation and ≥100 MHz down translation at ≤ 30 pF capacitive load. There is no need for a direction pin which minimizes system effort. The LSF0102-Q100 supports 5 V tolerant I/O pins for compatibility with TTL levels in a variety of applications. The ability to set up different voltage translation levels on each channel makes the device very flexible and suitable for a lot of different applications.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +125 °C
Bidirectional voltage translation with no direction pin
Up translation
≤ 100 MHz; CL = 30 pF
≤ 50 MHz; CL = 50 pF
Down translation
≥ 100 MHz; CL = 30 pF
≥ 50 MHz; CL = 50 pF
Hot insertion
Bidirectional voltage level translation between:
0.95 V and 1.8 V, 2.5 V, 3.3 V and 5.0 V
1.2 V and 1.8 V, 2.5 V, 3.3 V and 5.0 V
1.8 V and 2.5 V, 3.3 V and 5.0 V
2.5 V and 3.3 V and 5.0 V
3.3 V and 5.0 V
Low standby current
5 V tolerant I/O pins to support TTL
Low RON provides less signal distortion
High-impedance I/O pins for EN = Low.
Flow-through pinout for easy PCB trace routing.
Latch-up performance exceeds 100 mA per JESD78 class II level A
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 2 exceeds 2000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
GPIO, MDIO, PMBus, SMBus, SDIO, UART, I2C, and other interfaces in Telecom infrastructure
Industrial
Personal computing
型号 | Product status | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
LSF0102DP-Q100 | Production | 0.95 - 5.0 | 0.95 - 5.0 | CMOS | n.a. | 0.7 | 2 | low | -40~125 | 219 | 21.1 | 107 | TSSOP8 |
型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
LSF0102DP-Q100 | LSF0102DP-Q100H (935691058125) |
Active | h2 |
TSSOP8 (SOT505-2) |
SOT505-2 | SOT505-2_125 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
LSF0102_Q100 | 2-bit bidirectional multi-voltage level translator; open-drain; push-pull | Data sheet | 2023-11-28 |
AN90033 | Bidirectional multi-voltage level translator applications using Nexperia's LSF010x auto-sense devices | Application note | 2022-09-02 |
AN90050 | Pin FMEA for LSF family | Application note | 2023-12-14 |
Nexperia_document_guide_MiniLogic_PicoGate_201901 | PicoGate leaded logic portfolio guide | Brochure | 2019-01-07 |
SOT505-2 | 3D model for products with SOT505-2 package | Design support | 2019-01-18 |
lsf0102 | LSF0102 IBIS model | IBIS model | 2020-04-14 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT505-2 | plastic, thin shrink small outline package; 8 leads; 0.65 mm pitch; 3 mm x 3 mm x 1.1 mm body | Package information | 2022-06-03 |
SOT505-2_125 | TSSOP8; Reel pack for SMD, 7''; Q3/T4 product orientation | Packing information | 2020-04-21 |
LSF0102DP-Q100_Nexperia_Product_Reliability | LSF0102DP-Q100 Nexperia Product Reliability | Quality document | 2023-05-29 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
LSF0102DP-Q100 | LSF0102DP-Q100H | 935691058125 | Active | SOT505-2_125 | 3,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.