可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
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HEF4794BT-Q100 | HEF4794BT-Q100J | 935299251118 | SOT109-1 | 订单产品 |
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Click here for more information8-stage shift-and-store register LED driver
The HEF4794B-Q100 is an 8-stage serial shift register. It has a storage latch associated with each stage for strobing data from the serial input (D) to the parallel LED driver outputs (QP0 to QP7). Data is shifted on the positive-going clock (CP) transitions. The data in each shift register stage is transferred to the storage register when the strobe input (STR) is HIGH. Data in the storage register appears at the outputs whenever the output enable input (OE) signal is HIGH.
Two serial outputs (QS1 and QS2) are available for cascading a number of HEF4794B-Q100 devices. Serial data is available at QS1 on positive-going clock edges to allow high-speed operation in cascaded systems with a fast clock rise time. The same serial data is available at QS2 on the next negative going clock edge. This is used for cascading HEF4794B-Q100 devices when the clock has a slow rise time.
It operates over a recommended VDD power supply range of 3 V to 15 V referenced to VSS (usually ground). Unused inputs must be connected to VDD, VSS, or another input.
This product has been qualified to the Automotive Electronics Council (AEC) standard Q100 (Grade 1) and is suitable for use in automotive applications.
Automotive product qualification in accordance with AEC-Q100 (Grade 1)
Specified from -40 °C to +85 °C and from -40 °C to +125 °C
Wide supply voltage range from 3.0 V to 15.0 V
CMOS low power dissipation
High noise immunity
Fully static operation
5 V, 10 V, and 15 V parametric ratings
Standardized symmetrical output characteristics
Complies with JEDEC standard JESD 13-B
MIL-STD-883, method 3015 exceeds 2 kV
HBM JESD22-A114F exceeds 2 kV
MM JESD22-A115-A exceeds 200 V (C = 200 pF; R = 0 Ω)
型号 | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
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HEF4794BT-Q100 | Production | 3.0 - 15 | CMOS | -20 | 45 | 28 | medium | -40~85 | 82 | 5.3 | 41.3 | SO16 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
HEF4794BT-Q100 | HEF4794BT-Q100J (935299251118) |
Active | HEF4794BT |
SO16 (SOT109-1) |
SOT109-1 |
SO-SOJ-REFLOW
SO-SOJ-WAVE WAVE_BG-BD-1 |
SOT109-1_118 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
HEF4794B_Q100 | 8-stage shift-and-store register LED driver | Data sheet | 2018-11-08 |
AN11051 | Pin FMEA HEF4000 family | Application note | 2019-01-09 |
SOT109-1 | 3D model for products with SOT109-1 package | Design support | 2020-01-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SO16_SOT109-1_mk | plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.35 mm body | Marcom graphics | 2017-01-28 |
SOT109-1 | plastic, small outline package; 16 leads; 1.27 mm pitch; 9.9 mm x 3.9 mm x 1.75 mm body | Package information | 2023-11-07 |
SOT109-1_118 | SO16; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2024-02-19 |
HEF4794BT-Q100_Nexperia_Product_Reliability | HEF4794BT-Q100 Nexperia Product Reliability | Quality document | 2023-05-29 |
SO-SOJ-REFLOW | Footprint for reflow soldering | Reflow soldering | 2009-10-08 |
SO-SOJ-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
WAVE_BG-BD-1 | Wave soldering profile | Wave soldering | 2021-09-08 |
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文件名称 | 标题 | 类型 | 日期 |
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SOT109-1 | 3D model for products with SOT109-1 package | Design support | 2020-01-22 |
Model Name | 描述 |
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型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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HEF4794BT-Q100 | HEF4794BT-Q100J | 935299251118 | Active | SOT109-1_118 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.