可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
---|---|---|---|---|
74LV595PW | 74LV595PW,118 | 935198290118 | SOT403-1 | 订单产品 |
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Click here for more information8-bit serial-in/serial-out or parallel-out shift register; 3-state
The 74LV595 is an 8-bit serial-in/serial or parallel-out shift register with a storage register and 3-state outputs. Both the shift and storage register have separate clocks. The device features a serial input (DS) and a serial output (Q7S) to enable cascading and an asynchronous reset MR input. A LOW on MR will reset the shift register. Data is shifted on the LOW-to-HIGH transitions of the SHCP input. The data in the shift register is transferred to the storage register on a LOW-to-HIGH transition of the STCP input. If both clocks are connected together, the shift register will always be one clock pulse ahead of the storage register. Data in the storage register appears at the output whenever the output enable input (OE) is LOW. A HIGH on OE causes the outputs to assume a high-impedance OFF-state. Operation of the OE input does not affect the state of the registers. Inputs include clamp diodes. This enables the use of current limiting resistors to interface inputs to voltages in excess VCC.
Wide supply voltage range from 1.0 V to 3.6 V
CMOS low power dissipation
Direct interface with TTL levels
Typical output ground bounce < 0.8 V at VCC = 3.3 V and Tamb = 25 °C
Typical HIGH-level output voltage (VOH) undershoot: > 2 V at VCC = 3.3 V and Tamb = 25 °C
Has a shift register with direct clear
Output capability:
Parallel outputs; bus driver
Serial output; standard
Latch-up performance exceeds 100 mA per JESD 78 Class II Level B
Complies with JEDEC standards
JESD8-7 (1.65 V to 1.95 V)
JESD8-5 (2.3 V to 2.7 V)
JESD8C (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114E exceeds 2000 V
MM JESD22-A115-A exceeds 200 V
Multiple package options
Specified from -40 °C to 85 °C and -40 °C to 125 °C
Serial-to-parallel data conversion
Remote control holding register
型号 | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
74LV595PW | Production | 1.0 - 3.6 | TTL | ± 8 | 15 | 77 | 8 | low | -40~125 | 114 | 1.9 | 41.8 | TSSOP16 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
---|---|---|---|---|---|---|---|
74LV595PW | 74LV595PW,118 (935198290118) |
Active | LV595 |
TSSOP16 (SOT403-1) |
SOT403-1 |
SSOP-TSSOP-VSO-WAVE
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SOT403-1_118 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74LV595 | 8-bit serial-in/serial-out or parallel-out shift register; 3-state | Data sheet | 2024-04-08 |
SOT403-1 | 3D model for products with SOT403-1 package | Design support | 2020-01-22 |
lv595 | 74LV595 IBIS model | IBIS model | 2019-02-04 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
TSSOP16_SOT403-1_mk | plastic, thin shrink small outline package; 16 leads; 0.65 mm pitch; 5 mm x 4.4 mm x 1.1 mm body | Marcom graphics | 2017-01-28 |
SOT403-1 | plastic, thin shrink small outline package; 16 leads; 5 mm x 4.4 mm x 1.2 mm body | Package information | 2023-11-08 |
SOT403-1_118 | TSSOP16; Reel pack for SMD, 13"; Q1/T1 product orientation | Packing information | 2020-04-21 |
74LV595PW_Nexperia_Product_Reliability | 74LV595PW Nexperia Product Reliability | Quality document | 2023-05-29 |
lv | lv Spice model | SPICE model | 2013-05-07 |
SSOP-TSSOP-VSO-WAVE | Footprint for wave soldering | Wave soldering | 2009-10-08 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
---|---|---|---|---|---|---|
74LV595PW | 74LV595PW,118 | 935198290118 | Active | SOT403-1_118 | 2,500 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.