可订购部件
型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
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74AVC2T45GN | 74AVC2T45GN,115 | 935292232115 | SOT1116 | 订单产品 |
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Click here for more informationDual-bit, dual-supply voltage level translator/transceiver; 3-state
The 74AVC2T45 is a dual-bit, dual-supply transceiver that enables bidirectional level translation. It features two data input-output ports (nA and nB), a direction control input (DIR) and dual-supply pins (VCC(A) and VCC(B)). Both VCC(A) and VCC(B) can be supplied at any voltage between 0.8 V and 3.6 V making the device suitable for translating between any of the low voltage nodes (0.8 V, 1.2 V, 1.5 V, 1.8 V, 2.5 V and 3.3 V). Pins nA and DIR are referenced to VCC(A) and pins nB are referenced to VCC(B). A HIGH on DIR allows transmission from nA to nB and a LOW on DIR allows transmission from nB to nA.
The device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing any damaging backflow current through the device when it is powered down. In Suspend mode when either VCC(A) or VCC(B) are at GND level, both A and B are in the high-impedance OFF-state.
Wide supply voltage range:
VCC(A): 0.8 V to 3.6 V
VCC(B): 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
ESD protection:
HBM JESD22-A114F Class 3B exceeds 8000 V
MM JESD22-A115-A exceeds 200 V
CDM JESD22-C101C exceeds 1000 V
Maximum data rates:
500 Mbit/s (1.8 V to 3.3 V translation)
320 Mbit/s (<1.8 V to 3.3 V translation)
320 Mbit/s (translate to 2.5 V or 1.8 V)
280 Mbit/s (translate to 1.5 V)
240 Mbit/s (translate to 1.2 V)
Suspend mode
Latch-up performance exceeds 100 mA per JESD 78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial Power-down mode operation
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
型号 | Product status | VCC(A) (V) | VCC(B) (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|
74AVC2T45GN | Production | 0.8 - 3.6 | 0.8 - 3.6 | CMOS/LVTTL | ± 12 | 2.1 | 2 | very low | -40~125 | 242 | 11.4 | 151 | XSON8 |
Model Name | 描述 |
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型号 | 可订购的器件编号,(订购码(12NC)) | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
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74AVC2T45GN | 74AVC2T45GN,115 (935292232115) |
Active | B5 |
XSON8 (SOT1116) |
SOT1116 |
REFLOW_BG-BD-1
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SOT1116_115 |
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
74AVC2T45 | Dual-bit, dual-supply voltage level translator/transceiver; 3-state | Data sheet | 2021-11-04 |
AN90007 | Pin FMEA for AVC family | Application note | 2018-11-30 |
Nexperia_document_guide_Logic_translators | Nexperia Logic Translators | Brochure | 2021-04-12 |
Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
SOT1116 | 3D model for products with SOT1116 package | Design support | 2023-02-02 |
avc2t45 | 74AVC2T45 IBIS model | IBIS model | 2022-12-22 |
Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
SOT1116 | plastic, leadless extremely thin small outline package; 8 terminals; 0.3 mm pitch; 1.2 mm x 1 mm x 0.35 mm body | Package information | 2022-06-02 |
SOT1116_115 | XSON8 ; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
74AVC2T45GN_Nexperia_Product_Reliability | 74AVC2T45GN Nexperia Product Reliability | Quality document | 2023-05-29 |
REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
MAR_SOT1116 | MAR_SOT1116 Topmark | Top marking | 2013-06-03 |
型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
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74AVC2T45GN | 74AVC2T45GN,115 | 935292232115 | Active | SOT1116_115 | 5,000 | 订单产品 |
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The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.