可订购部件
| 型号 | 可订购的器件编号 | 订购代码(12NC) | 封装 | 从经销商处购买 |
|---|---|---|---|---|
| 74AUP2G00GN | 74AUP2G00GN,115 | 935292217115 | SOT1116 | 订单产品 |
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Click here for more information74AUP2G00GN
Low-power dual 2-input NAND gate
The 74AUP2G00 provides dual 2-input NAND function.
Schmitt trigger action at all inputs makes the circuit tolerant to slower input rise and fall times across the entire VCC range from 0.8 V to 3.6 V.
This device ensures a very low static and dynamic power consumption across the entire VCC range from 0.8 V to 3.6 V.
This device is fully specified for partial power-down applications using IOFF. The IOFF circuitry disables the output, preventing a damaging backflow current through the device when it is powered down.
Features and benefits
Wide supply voltage range from 0.8 V to 3.6 V
High noise immunity
Complies with JEDEC standards:
JESD8-12 (0.8 V to 1.3 V)
JESD8-11 (0.9 V to 1.65 V)
JESD8-7 (1.2 V to 1.95 V)
JESD8-5 (1.8 V to 2.7 V)
JESD8-B (2.7 V to 3.6 V)
Low static power consumption; ICC = 0.9 μA (maximum)
Latch-up performance exceeds 100 mA per JESD78 Class II
Inputs accept voltages up to 3.6 V
Low noise overshoot and undershoot < 10 % of VCC
IOFF circuitry provides partial power-down mode operation
ESD protection:
HBM: ANSI/ESDA/JEDEC JS-001 class 3A exceeds 5000 V
CDM: ANSI/ESDA/JEDEC JS-002 class C3 exceeds 1000 V
Multiple package options
Specified from -40 °C to +85 °C and -40 °C to +125 °C
参数类型
| 型号 | Product status | VCC (V) | Logic switching levels | Output drive capability (mA) | tpd (ns) | fmax (MHz) | Nr of bits | Power dissipation considerations | Tamb (°C) | Rth(j-a) (K/W) | Ψth(j-top) (K/W) | Rth(j-c) (K/W) | Package name |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| 74AUP2G00GN | Production | 0.8 - 3.6 | CMOS | ± 1.9 | 8.3 | 70 | 2 | ultra low | -40~125 | 238 | 10.6 | 148 | XSON8 |
PCB Symbol, Footprint and 3D Model
| Model Name | 描述 |
|---|---|
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封装
| 型号 | 可订购的器件编号，（订购码(12NC)） | 状态 | 标示 | 封装 | 外形图 | 回流焊/波峰焊 | 包装 |
|---|---|---|---|---|---|---|---|
| 74AUP2G00GN | 74AUP2G00GN,115 (935292217115) |
Active | pA |
XSON8 (SOT1116) |
SOT1116 |
REFLOW_BG-BD-1
|
SOT1116_115 |
Series
文档 (12)
| 文件名称 | 标题 | 类型 | 日期 |
|---|---|---|---|
| 74AUP2G00 | Low-power dual 2-input NAND gate | Data sheet | 2024-05-29 |
| AN11052 | Pin FMEA for AUP family | Application note | 2019-01-09 |
| Nexperia_document_guide_MiniLogic_MicroPak_201808 | MicroPak leadless logic portfolio guide | Brochure | 2018-09-03 |
| SOT1116 | 3D model for products with SOT1116 package | Design support | 2023-02-02 |
| aup2g00 | aup2g00 IBIS model | IBIS model | 2013-04-07 |
| Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Nexperia_document_leaflet_Logic_AUP_technology_portfolio_201904 | Leaflet | 2019-04-12 |
| Nexperia_package_poster | Nexperia package poster | Leaflet | 2020-05-15 |
| SOT1116 | plastic, leadless extremely thin small outline package; 8 terminals; 0.3 mm pitch; 1.2 mm x 1 mm x 0.35 mm body | Package information | 2022-06-02 |
| SOT1116_115 | XSON8 ; Reel pack for SMD, 7''; Q1/T1 product orientation | Packing information | 2020-04-21 |
| 74AUP2G00GN_Nexperia_Product_Reliability | 74AUP2G00GN Nexperia Product Reliability | Quality document | 2023-05-29 |
| REFLOW_BG-BD-1 | Reflow soldering profile | Reflow soldering | 2021-04-06 |
| MAR_SOT1116 | MAR_SOT1116 Topmark | Top marking | 2013-06-03 |
订购、定价与供货
| 型号 | Orderable part number | Ordering code (12NC) | 状态 | 包装 | Packing Quantity | 在线购买 |
|---|---|---|---|---|---|---|
| 74AUP2G00GN | 74AUP2G00GN,115 | 935292217115 | Active | SOT1116_115 | 5,000 | 订单产品 |
样品
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How does it work?
The interactive datasheets are based on the Nexperia MOSFET precision electrothermal models. With our interactive datasheets you can simply specify your own conditions interactively. Start by changing the values of the conditions. You can do this by using the sliders in the condition fields. By dragging the sliders you will see how the MOSFET will perform at the new conditions set.
74AUP2G00GN
Low-power dual 2-input NAND gate
从安世半导体购买
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