Key MOSFET Requirements:
- Ultra low on-resistance
- Low thermal resistance
- Safe high temperature operation
- Excellent current handling
- Guaranteed repetitive avalanche capability
D2PAK is ideal for integrated starter generator applications with ultra-low on-resistance and high current transient robustness.
Main benefits:
- Low on-resistance
- Lowest thermal resistance
- Highest current handling capability
- Guaranteed repetitive avalanche rating
Parametric search
Products
Automotive qualified products (AEC-Q100/Q101)
型号 | 描述 | 状态 | 快速访问 |
---|---|---|---|
BUK761R6-40E | N-channel TrenchMOS standard level FET | Production | |
BUK761R7-40E | N-channel TrenchMOS standard level FET | Production | |
BUK763R8-80E | N-channel TrenchMOS standard level FET | Production | |
BUK765R0-100E | N-channel TrenchMOS standard level FET | Production |
MOSFETs
型号 | 描述 | 状态 | 快速访问 |
---|---|---|---|
BUK761R6-40E | N-channel TrenchMOS standard level FET | Production | |
BUK761R7-40E | N-channel TrenchMOS standard level FET | Production | |
BUK763R8-80E | N-channel TrenchMOS standard level FET | Production | |
BUK765R0-100E | N-channel TrenchMOS standard level FET | Production |
Documentation
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
compleet_2_start | Start | Marcom graphics | 2015-03-17 |
nexperia_document_leaflet_WLCSP_201803_CHN | WLCSP Chinese Translation | Leaflet | 2018-04-25 |
Nexperia_Selection_guide_2023 | Nexperia Selection Guide 2023 | Selection guide | 2023-05-10 |
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Datasheets (4)
文件名称 | 标题 | 类型 | 日期 |
---|---|---|---|
BUK761R6-40E | N-channel TrenchMOS standard level FET | Data sheet | 2017-04-20 |
BUK761R7-40E | N-channel TrenchMOS standard level FET | Data sheet | 2017-03-20 |
BUK763R8-80E | N-channel TrenchMOS standard level FET | Data sheet | 2017-03-20 |
BUK765R0-100E | N-channel TrenchMOS standard level FET | Data sheet | 2017-03-20 |